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Il numero della parte	RJK0856DPB

Spiegazioni elettronici	80V, 35A, 8.9m max. Silicon N Channel Power MOS FET Power Switching

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Produttore elettronici	RENESAS [Renesas Technology Corp]

Homepage	http://www.renesas.com

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Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Renesas Technology Corp	RJK0856DPB	154Kb / 7P	80V, 35A, 8.9m??max. Silicon N Channel Power MOS FET Power Switching

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Renesas Technology Corp	RJK0451DPB	108Kb / 7P	40V, 35A, 7.0m max. Silicon N Channel Power MOS FET Power Switching
	RJK0652DPB	108Kb / 7P	60V, 35A, 7.0m max. Silicon N Channel Power MOS FET Power Switching
	RJK0655DPB	158Kb / 7P	60V, 35A, 6.7m max. Silicon N Channel Power MOS FET Power Switching
	RJK0851DPB	108Kb / 7P	80V, 20A, 23m max. Silicon N Channel Power MOS FET Power Switching
	RJK0852DPB	108Kb / 7P	80V, 30A, 12m max. Silicon N Channel Power MOS FET Power Switching
	RJK0856DPB	154Kb / 7P	80V, 35A, 8.9m??max. Silicon N Channel Power MOS FET Power Switching
	RJK0655DPB	158Kb / 7P	60V, 35A, 6.7m??max. Silicon N Channel Power MOS FET Power Switching
	RJK0451DPB	108Kb / 7P	40V, 35A, 7.0m??max. Silicon N Channel Power MOS FET Power Switching
	RJK0652DPB	108Kb / 7P	60V, 35A, 7.0m??max. Silicon N Channel Power MOS FET Power Switching
	RJK0853DPB	108Kb / 7P	80V, 40A, 8.0m??max. Silicon N Channel Power MOS FET Power Switching