IRF840 pdf, IRF840 Spiegazioni elettronici, IRF840 Scheda tecnica, IRF840 view ::: ALLDATASHEET :::

Il numero della parte	IRF840

Spiegazioni elettronici	PowerMOS transistor Avalanche energy rated

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Produttore elettronici	PHILIPS [NXP Semiconductors]

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Codice articolo simile - IRF840

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Motorola, Inc	IRF840	146Kb / 2P	N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
STMicroelectronics	IRF840	93Kb / 8P	N - CHANNEL 500V - 0.75ohm - 8A - TO-220 PowerMESH] MOSFET Aug-1998
Samsung semiconductor	IRF840	272Kb / 5P	N-CHANNEL POWER MOSFETS
Fairchild Semiconductor	IRF840	150Kb / 5P	N-Channel Power MOSFETs, 8A, 450 V/500V
Fairchild Semiconductor	IRF840	911Kb / 10P	500V N-Channel MOSFET

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
NXP Semiconductors	IRF730	59Kb / 7P	PowerMOS transistor Avalanche energy rated March 1999 Rev 1.000
	IRF830	58Kb / 7P	PowerMOS transistor Avalanche energy rated March 1999 Rev 1.000
	PHP10N40E	115Kb / 7P	PowerMOS transistors Avalanche energy rated December 1998 Rev 1.000
	PHP11N50E	41Kb / 7P	PowerMOS transistors Avalanche energy rated January 1998 Rev 1.000
	PHP3N60E	79Kb / 9P	PowerMOS transistors Avalanche energy rated December 1998 Rev 1.200
	PHP7N40E	78Kb / 9P	PowerMOS transistors Avalanche energy rated December 1998 Rev 1.200
	PHX10N40E	74Kb / 8P	PowerMOS transistors Avalanche energy rated December 1998 Rev 1.200
	PHX3N60E	73Kb / 8P	PowerMOS transistors Avalanche energy rated December 1998 Rev 1.200
	PHX4N60E	75Kb / 8P	PowerMOS transistors Avalanche energy rated December 1998 Rev 1.200
	PHX8N50E	74Kb / 8P	PowerMOS transistors Avalanche energy rated December 1998 Rev 1.300