| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
 Toshiba Semiconductor |
DSF05S30CTB
|
178Kb / 3P |
Diode Silicon Epitaxial Schottky Barrier Type
|
|
DSF05S30U
|
183Kb / 3P |
Diode Silicon Epitaxial Schottky Barrier Type
|
|
DSF07S30U
|
186Kb / 3P |
Diode Silicon Epitaxial Schottky Barrier Type
|
|
DSR05S30CTB
|
179Kb / 3P |
Diode Silicon Epitaxial Schottky Barrier Type
|
|
DSR05S30U
|
184Kb / 3P |
Diode Silicon Epitaxial Schottky Barrier Type
|
|
DSR07S30U
|
188Kb / 3P |
Diode Silicon Epitaxial Schottky Barrier Type
|
 Pan Jit International I... |
1SS388
|
116Kb / 3P |
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE
|
|
1SS388
|
175Kb / 5P |
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE
|
 Toshiba Semiconductor |
JDH2S01T
|
70Kb / 2P |
Diode Silicon Epitaxial Schottky Barrier Type
|
 Pan Jit International I... |
1SS388
|
174Kb / 5P |
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE
May 31,2016REV. |