GT50J322 pdf, GT50J322 Spiegazioni elettronici, GT50J322 Scheda tecnica, GT50J322 view ::: ALLDATASHEET :::

Il numero della parte	GT50J322

Spiegazioni elettronici	SILICON N CHANNEL IGBT FOURTH GENERATION IGBT

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Produttore elettronici	TOSHIBA [Toshiba Semiconductor]

Homepage	http://www.semicon.toshiba.co.jp/eng

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Codice articolo simile - GT50J322

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Toshiba Semiconductor	GT50J322	254Kb / 5P	N CHANNEL MOS TYPE (THE 4TH CENERATION CURRENT RESONACE INVERTER SWITHCING APPLICATIONS) 17-Nov-1998
	GT50J322	1Mb / 73P	Bipolar Small-Signal Transistors
	GT50J322H	1Mb / 73P	Bipolar Small-Signal Transistors

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Hitachi Semiconductor	2SH12	43Kb / 8P	Silicon N-Channel IGBT
	2SH15	43Kb / 8P	Silicon N-Channel IGBT
	2SH17	41Kb / 8P	Silicon N-Channel IGBT
	2SH22	42Kb / 8P	Silicon N-Channel IGBT
Toshiba Semiconductor	MIG75J101H	198Kb / 8P	Silicon N Channel IGBT
Toshiba Semiconductor	MG200Q2YS65H	158Kb / 6P	IGBT Module Silicon N Channel IGBT
Hitachi Semiconductor	MBN400C33A	56Kb / 4P	Silicon N-channel IGBT
Toshiba Semiconductor	MG150J1ZS50	226Kb / 6P	Silicon N Channel IGBT
	GT35J321	290Kb / 6P	Fourth-generation IGBT Current Resonance Inverter Switching Applications
	GT50J328	232Kb / 6P	Current Resonance Inverter Switching Application Fourth Generation IGBT