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H339N3FB Scheda tecnica (PDF) - Guangdong Huixin Electronic Technology Co., Ltd.

Il numero della parte	H339N3FB

Spiegazioni elettronici	30V SGT N-Channel MOSFET

Grandezza file	865.15 Kbytes

Html View	1 2 3 4 5 6

Produttore elettronici	HUIXIN [Guangdong Huixin Electronic Technology Co., Ltd.]

Homepage	http://www.hxkj.hk

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H339N3FB Scheda tecnica (PDF) - Guangdong Huixin Electronic Technology Co., Ltd.

Codice articolo simile - H339N3FB

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Micro Commercial Compon...	H33	108Kb / 4P	500 mW Zener Diode 1.7 to 37.2 Volts
	H33-1	108Kb / 4P	500 mW Zener Diode 1.7 to 37.2 Volts
	H33-2	108Kb / 4P	500 mW Zener Diode 1.7 to 37.2 Volts
	H33-3	108Kb / 4P	500 mW Zener Diode 1.7 to 37.2 Volts
Guangdong Huixin Electr...	H332N4HT	906Kb / 6P	40V SGT N-Channel MOSFET

Descrizione simile - H339N3FB

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
SHENZHEN DOINGTER SEMIC...	RU6050L	1Mb / 5P	N-Channel MOSFET uses advanced SGT technology
	SM1A06NSU	1Mb / 5P	N-Channel MOSFET uses advanced SGT technology
	SM1C01NSF	1Mb / 4P	N-Channel MOSFET uses advanced SGT technology
	SSD40N10-30D	862Kb / 4P	N-Channel MOSFET uses advanced SGT technology
	STD30N10F7	862Kb / 4P	N-Channel MOSFET uses advanced SGT technology
	STD45N10F7	1Mb / 5P	N-Channel MOSFET uses advanced SGT technology
	STD70N6F3	1Mb / 5P	N-Channel MOSFET uses advanced SGT technology
	STP240N10F7	1Mb / 5P	N-Channel MOSFET uses advanced SGT technology
	STU45N01	862Kb / 4P	N-Channel MOSFET uses advanced SGT technology
	STU630S	1Mb / 5P	N-Channel MOSFET uses advanced SGT technology

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