NGW30T60M3DF pdf, NGW30T60M3DF Spiegazioni elettronici, NGW30T60M3DF Scheda tecnica, NGW30T60M3DF view ::: ALLDATASHEET :::

Il numero della parte	NGW30T60M3DF

Spiegazioni elettronici	600 V, 30 A trench field-stop IGBT with full rated silicon diode

Grandezza file	258.63 Kbytes

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Produttore elettronici	NEXPERIA [Nexperia B.V. All rights reserved]

Homepage	https://www.nexperia.com/

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Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Fairchild Semiconductor	FGH40N60SFDTU	291Kb / 9P	600 V, 40 A Field Stop IGBT
STMicroelectronics	STGW50H60DF	1Mb / 12P	50 A, 600 V field stop trench gate IGBT with Ultrafast diode 26-Jul-2012
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STMicroelectronics	STGB30H60DF	1Mb / 24P	600 V, 30 A high speed trench gate field-stop IGBT 20-Mar-2013
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ON Semiconductor	FGAF30S65AQ	302Kb / 9P	Field Stop Trench IGBT, 30 A, 650 V June, 2020 - Rev. 2