| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
Samsung semiconductor |
KSK65
|
85Kb / 3P |
N-CHANNEL JUNCTION FET (AM IMPEDANCE CONVERTER)
|
Fairchild Semiconductor |
FQB7N30
|
744Kb / 9P |
300V N0Channel MOSFET
|
Sanyo Semicon Device |
2SK3796
|
46Kb / 4P |
N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier, Impedance Converter Applications
|
|
EC3A04B
|
50Kb / 4P |
N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier, Impedance Converter Applications
|
|
EC3A04B
|
52Kb / 4P |
N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier,Impedance Converter Applications
|
Panasonic Semiconductor |
DSKTJ05
|
445Kb / 3P |
Silicon N-channel junction FET For AF impedance converter
|
|
DSKTJ08
|
440Kb / 3P |
Silicon N-channel junction FET For AF impedance converter
|
Sanyo Semicon Device |
TF408
|
337Kb / 4P |
N-Channel Silicon Junction FET Low-Frequency General-Purpose Amplifi er, Impedance Converter Applications
|
|
TF410
|
318Kb / 3P |
N-Channel Silicon Junction FET Impedance Converter, Infrared Sensor Applications
|
|
2SK3738
|
474Kb / 6P |
N-Channel Junction Silicon FET Impedance Converter Applications
|
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