| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
 Samsung semiconductor |
K4E661612C
|
884Kb / 36P |
4M x 16bit CMOS Dynamic RAM with Extended Data Out
|
 Texas Instruments |
TM4EP64BJN
|
354Kb / 22P |
EXTENDED-DATA-OUT DYNAMIC RAM MODULES
|
|
TM497FBK32
|
170Kb / 12P |
EXTENDED DATA OUT DYNAMIC RAM MODULES
|
 Samsung semiconductor |
K4E660412E
|
192Kb / 21P |
16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
 Texas Instruments |
TM2EP64DJN
|
679Kb / 43P |
EXTENDED-DATA-OUT DYNAMIC RAM MODULES
|
|
TM2EJ64DPN
|
312Kb / 20P |
EXTENDED-DATA-OUT DYNAMIC RAM MODULES ??SODIMM
|
|
TM4EJ64KPU
|
378Kb / 24P |
EXTENDED-DATA-OUT DYNAMIC RAM MODULES ??? SODIMM
|
|
TM497FBK32G
|
174Kb / 12P |
EXTENDED DATA OUT DYNAMIC RAM MODULES
|
|
TM497FBK32H
|
209Kb / 13P |
EXTENDED-DATA-OUT DYNAMIC RAM MODULES
|
|
TM4EN64KPU
|
328Kb / 20P |
EXTENDED-DATA-OUT DYNAMIC RAM MODULES
|