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STN4426 Scheda tecnica (PDF) - Stanson Technology

Il numero della parte	STN4426

Spiegazioni elettronici	STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

Grandezza file	362.61 Kbytes

Html View	1 2 3 4 5 6

Produttore elettronici	STANSON [Stanson Technology]

Homepage	http://www.stansontech.com

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STN4426 Scheda tecnica (PDF) - Stanson Technology

Codice articolo simile - STN4426

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
VBsemi Electronics Co.,...	STN4420	1Mb / 9P	N-Channel 20V (D-S) MOSFET
Stanson Technology	STN442D	1Mb / 7P	N Channel Enhancement Mode MOSFET
VBsemi Electronics Co.,...	STN442D	897Kb / 6P	N-Channel 6 0-V (D-S) MOSFET
SHENZHEN DOINGTER SEMIC...	STN442D	887Kb / 4P	N-Channel MOSFET uses advanced trench technology

Descrizione simile - STN4426

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Stanson Technology	ST2304SRG	630Kb / 6P	ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	ST3406SRG	325Kb / 6P	ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN1810	966Kb / 7P	STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4346	352Kb / 7P	STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4392	383Kb / 7P	STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4416	966Kb / 6P	STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4438	269Kb / 6P	STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4480	742Kb / 6P	STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4546	363Kb / 6P	STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4850	532Kb / 6P	STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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