NE66219 pdf, NE66219 Spiegazioni elettronici, NE66219 Scheda tecnica, NE66219 view ::: ALLDATASHEET :::

Il numero della parte	NE66219

Spiegazioni elettronici	NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

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Produttore elettronici	CEL [California Eastern Labs]

Homepage	http://www.cel.com

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Codice articolo simile - NE66219

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Renesas Technology Corp	NE662M03	229Kb / 12P	NPN SILICON RF TRANSISTOR 2003
Renesas Technology Corp	NE662M03-T1	229Kb / 12P	NPN SILICON RF TRANSISTOR 2003
NEC	NE662M04	93Kb / 10P	NPN SILICON HIGH FREQUENCY TRANSISTOR
California Eastern Labs	NE662M04	420Kb / 11P	NPN SILICON HIGH FREQUENCY TRANSISTOR
NEC	NE662M04-T2	93Kb / 10P	NPN SILICON HIGH FREQUENCY TRANSISTOR

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
NEC	2SC5606	68Kb / 6P	NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD
	NESG2021M16	120Kb / 12P	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
	NESG2031M16	119Kb / 12P	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
	NESG4030M14	112Kb / 10P	NPN SiGe:C RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD (M14, 1208 PKG)
	2SC5606	73Kb / 7P	NPN SILICON RF TRANSISTOR FOR LOW NOISE 쨌 HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
Renesas Technology Corp	2SC4226-T1-A	149Kb / 8P	NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold
California Eastern Labs	NESG2021M16	861Kb / 11P	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
California Eastern Labs	NESG210719	1Mb / 9P	NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)
Renesas Technology Corp	2SC4227	202Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN MINIMOLD
Renesas Technology Corp	2SC4228	202Kb / 9P	NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD