| Produttore elettronici | Il numero della parte | Scheda tecnica | Spiegazioni elettronici |
Hamamatsu Corporation |
P5968-060
|
170Kb / 4P |
InSb photovoltaic detector
|
|
P13243
|
225Kb / 4P |
InAsSb photovoltaic detectors
|
|
P10090
|
212Kb / 6P |
InAs photovoltaic detectors
|
|
P6606
|
822Kb / 5P |
InSb photoconductive detectors
|
VIGO Photonics S.A. |
PV-2TE
|
794Kb / 2P |
2.0 – 12.0 μm HgCdTe two-stage thermoelectrically cooled photovoltaic detectors
17/11/2020 |
|
PV-3TE
|
792Kb / 2P |
2.0 – 12.0 μm HgCdTe three-stage thermoelectrically cooled photovoltaic detectors
17/11/2020 |
|
PVA
|
637Kb / 2P |
2.4 – 5.3 μm InAs and InAsSb ambient temperature photovoltaic detectors
04/05/2022 |
|
PVI
|
700Kb / 2P |
2.5 – 6.5 μm HgCdTe ambient temperature, optically immersed photovoltaic detectors
25/09/2020 |
|
PV-SERIES
|
696Kb / 2P |
2.5 – 6.5 μm HgCdTe ambient temperature photovoltaic detectors
17/11/2020 |
|
PVM
|
695Kb / 2P |
2.0 – 13.0 μm HgCdTe ambient temperature photovoltaic multiple junction detectors
09/11/2020 |
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