| Motore di ricerca datesheet componenti elettronici |
|
040N03L Reseller |
| Reseller | Il numero della parte | Produttore elettronici | Spiegazioni elettronici | Price | Qty. BuyNow | |
![]() Avnet Americas | IPD040N03LF2SATMA1 | Infineon Technologies AG | - Tape and Reel (Alt: IPD040N03LF2SATMA1) RoHS : Compliant |
| 0 | |
IPD040N03LGATMA1![]() | Infineon Technologies AG | Trans MOSFET N-CH 30V 90A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD040N03LGATMA1) RoHS : Compliant |
| 0 | ||
![]() Newark | IPD040N03LF2SATMA1 | Infineon Technologies AG | Mosfet, N-Channel, 30V, 73A, To-252; |Infineon Technologies IPD040N03LF2SATMA1 RoHS : Compliant |
| 3,858 | |
| IPD040N03LF2SATMA1 | Infineon Technologies AG | Mosfet, N-Channel, 30V, 73A, To-252; |Infineon Technologies IPD040N03LF2SATMA1 RoHS : Compliant |
| 3,858 | ||
![]() Rochester Electronics | IPD040N03LGATMA1![]() | Infineon Technologies AG | MOSFET N-Channel 30V 90A (Tc) TO-252-3 T/R RoHS : Compliant |
| 350 | |
| ISZ040N03L5ISATMA1 | Infineon Technologies AG | Power Field-Effect Transistor RoHS : Compliant |
| 49,445 | ||
![]() TME | IPD040N03LGATMA1![]() | Infineon Technologies AG | Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3 RoHS : Compliant |
| 2,272 | |
| WMB040N03LG2 | Cyg Wayon Circuit Protection Co Ltd | Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 121A; 28W; PDFN5060-8 |
| 423 | ||
| WMQ040N03LG2 | Cyg Wayon Circuit Protection Co Ltd | Transistor: N-MOSFET; unipolar; 30V; 27A; Idm: 170A; 24.5W |
| 298 | ||
| ISZ040N03L5ISATMA1 | Infineon Technologies AG | Transistor: N-MOSFET; unipolar; 30V; 40A; 37W; PG-TDSON-8 RoHS : Compliant |
| 0 | ||
![]() Component Electronics, Inc | IPD040N03LG![]() | Infineon Technologies AG | IN STOCK SHIP TODAY RoHS : Compliant |
| 185 | |
![]() EBV Elektronik | IPD040N03LGATMA1![]() | Infineon Technologies AG | Trans MOSFET NCH 30V 90A 3Pin TO252 TR (Alt: SP000680628) RoHS : Compliant | 0 | ||
![]() Vyrian | IPS040N03LGBKMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 90A I(D), 30V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 11,515 | ||
IPS040N03LGAKMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 89A I(D), 30V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 RoHS : Compliant | 7,981 | |||
| IPD040N03LGBTMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 89A I(D), 30V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS : Compliant | 7,340 |
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