| Motore di ricerca datesheet componenti elettronici |
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F2SP-F-R/ Reseller |
| Reseller | Il numero della parte | Produttore elettronici | Spiegazioni elettronici | Price | Qty. BuyNow | |
![]() Ameya Holding Limited | NXH800A100L4Q2F2S1G | onsemi | 820 | |||
| NXH800A100L4Q2F2S2G | onsemi | RoHS : Compliant | 820 | |||
![]() Richardson RFPD | NXH200T120H3Q2F2STNG | onsemi | Si/SiC Hybrid Module, Split T-Type NPC inverter So RoHS : Compliant | 0 | ||
| NXH200T120H3Q2F2SG | onsemi | Si SiC Hybrid Module, Split T Type NPC, IGBT 1200 RoHS : Compliant | 0 | |||
| NXH400N100L4Q2F2SG | onsemi | Trans IGBT Module N-CH 1000V 360A 980W Tray RoHS : Compliant | 0 | |||
| DCMC392M500DF2S | Knowles CDE | Alum Electrolytc Cap RoHS : Compliant | 0 | |||
![]() Rutronik | IPB043N10NF2SATMA1 | Infineon Technologies AG | N-CH 100V 135A 4,4mOhm TO-263 RoHS : Compliant |
| 3,230 | |
| IPB013N06NF2SATMA1 | Infineon Technologies AG | N-CH 60V 198A 1,3mOhm TO-263 RoHS : Compliant |
| 850 | ||
| IPB014N04NF2SATMA1 | Infineon Technologies AG | N-CH 40V 193A 1,45mOhm TO263 RoHS : Compliant |
| 850 | ||
| IPB015N06NF2SATMA1 | Infineon Technologies AG | N-CH 60V 172A 1,5mOhm TO-263 RoHS : Compliant |
| 850 | ||
| IPB023N04NF2SATMA1 | Infineon Technologies AG | N-CH 40V 175A 2,4mOhm TO-263 RoHS : Compliant |
| 850 | ||
| IPB029N06NF2SATMA1 | Infineon Technologies AG | N-CH 60V 119A 2,9mOhm TO-263 RoHS : Compliant |
| 850 | ||
| IPB018N06NF2SATMA1 | Infineon Technologies AG | N-CH 60V 185A 1,8mOhm TO-263 RoHS : Compliant |
| 840 | ||
| IPB024N08NF2SATMA1 | Infineon Technologies AG | N-CH 80V 161A 2,4mOhm TO-263 RoHS : Compliant |
| 800 | ||
| IPB035N10NF2SATMA1 | Infineon Technologies AG | N-CH 100V 151A 3.2mOhm TO263-3 RoHS : Compliant |
| 800 | ||
| IPA082N10NF2SXKSA1 | Infineon Technologies AG | N-CH 100V 46A 7,3mOhm TO220FP RoHS : Compliant |
| 550 | ||
| IPA030N10NF2SXKSA1 | Infineon Technologies AG | N-CH 100V 83A 2,6mOhm TO220FP RoHS : Compliant |
| 250 | ||
| IPD023N04NF2SATMA1 | Infineon Technologies AG | N-CH 40V 143A 1,4mOhm TO252 RoHS : Compliant |
| 50 | ||
| IPB040N08NF2SATMA1 | Infineon Technologies AG | N-CH 80V 107A 4,0mOhm TO-263 RoHS : Compliant |
| 30 | ||
| IPB055N08NF2SATMA1 | Infineon Technologies AG | N-CH 80V 98A 5,5mOhm TO-263 RoHS : Compliant |
| 20 | ||
| IPB026N10NF2SATMA1 | Infineon Technologies AG | N-CH 100V 162A 2,7mOhm TO-263 RoHS : Compliant |
| 15 | ||
![]() Avnet Silica | CNY17F2SM | onsemi | 6Pin DIP High BVCEO Phototransistor Output Optocoupler ONSSPCISTNJZ8E4V (Alt: CNY17F2SM) RoHS : Compliant | 2,000 | ||
| CNY17F2SR2M | onsemi | 6Pin DIP High BVCEO Phototransistor Output Optocoupler ONSSPCISTNJZ8E4V (Alt: CNY17F2SR2M) RoHS : Compliant | 0 | |||
| CNY17F2SR2VM | onsemi | 6Pin DIP High BVCEO Phototransistor Output Optocoupler ONSSPCISTNJZ8E4V (Alt: CNY17F2SR2VM) RoHS : Compliant | 0 | |||
| NXH400N100H4Q2F2SG | onsemi | SiC Hybrid Module IType NPC 1000 V 400 A IGBT 1200 V 100 A SiC Diode Solder pins (Alt: NXH400N100H4Q2F2SG) RoHS : Compliant | 0 | |||
| NXH450N65L4Q2F2S1G | onsemi | Power Integrated Module PIM IType NPC 650 V 450 A IGBT 650 V 250 A Diode 175degC Module Operating Junction Temperature (Alt: NXH450N65L4Q2F2S1G) RoHS : Compliant | 0 | |||
| SF2-STARTER-KIT-ES | Microchip Technology Inc | SmartFusion2 SystemOnChip FPGA Stater Kit (Alt: SF2-STARTER-KIT-ES-2) RoHS : Compliant | 0 | |||
| NXH200T120H3Q2F2SG | onsemi | SiSiC Hybrid Module Split TType NPC inverter Solder pins (Alt: NXH200T120H3Q2F2SG) RoHS : Compliant | 0 | |||
| NXH160T120L2Q2F2S1G | onsemi | Power Integrated Module PIM IGBT 1200 V 160 A and 650 V 100 A (Alt: NXH160T120L2Q2F2S1G) RoHS : Compliant | 0 | |||
| SF2-STARTER-KIT-ES-2 | Microchip Technology Inc | SmartFusion2 SystemOnChip FPGA Stater Kit (Alt: SF2-STARTER-KIT-ES-2) RoHS : Compliant | 0 | |||
![]() Braemac Americas-Symmetry | PCFL-180P-F2S | Nipron Co | 180W fanless ATX power supply |
| 1 | |
| BE890F2S110TMI1000 | Telit | BLE 4.2 FULL SENSORS / BLUEMOD+S42M/AI3ATH |
| 0 | ||
![]() Flip Electronics | NGTD8R65F2SWK | onsemi | Stock, Ship Today RoHS : Compliant | 17,557 | ||
| NXH300B100H4Q2F2S1G | onsemi | Stock, Ship Today | 2,448 | |||
| CNY17F2SVM | onsemi | Stock, Ship Today RoHS : Compliant | 2,000 | |||
| CNY17F2SM | onsemi | Stock, Ship Today RoHS : Compliant | 995 | |||
| NXH400N100H4Q2F2SG | onsemi | Stock, Ship Today RoHS : Compliant | 36 | |||
| NXH400N100L4Q2F2SG | onsemi | Stock, Ship Today RoHS : Compliant | 36 | |||
| NXH450N65L4Q2F2S1G-01 | onsemi | Stock, Ship Today | 36 | |||
| NXH200B100H4F2SG | onsemi | Stock, Ship Today | 20 | |||
| NXH450B100H4Q2F2SG | onsemi | Stock, Ship Today RoHS : Compliant | 12 | |||
![]() Maritex | WCM3225F2SF-601T10 | Tai-Tech Advanced Electronics Co Ltd | Common Choke SMD 600 Ohm @ 100Mhz; 1A; RoHS : Compliant |
| 2,353 | |
![]() Vyrian | NXH800A100L4Q2F2S1G | onsemi | Insulated Gate Bipolar Transistor, 309A I(C), 1000V V(BR)CES, N-Channel | 12,357 | ||
| NXH400N100H4Q2F2SG-R | onsemi | Insulated Gate Bipolar Transistor, 409A I(C), 1000V V(BR)CES, N-Channel RoHS : Compliant | 12,207 | |||
| NXH350N100H4Q2F2SG | onsemi | Insulated Gate Bipolar Transistor, 329A I(C), 1000V V(BR)CES, N-Channel RoHS : Compliant | 12,038 | |||
| NGTD21T65F2SWK | onsemi | Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel RoHS : Compliant | 10,713 | |||
| NXH450N65L4Q2F2S1G | onsemi | Insulated Gate Bipolar Transistor, 167A I(C), 650V V(BR)CES, N-Channel RoHS : Compliant | 10,348 | |||
| NGTD20T120F2SWK | onsemi | Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel RoHS : Compliant | 8,295 | |||
| NXH200T120H3Q2F2SG | onsemi | Insulated Gate Bipolar Transistor, 256A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 7,448 | |||
| NXH350N100H4Q2F2S1G | onsemi | Insulated Gate Bipolar Transistor RoHS : Compliant | 6,565 | |||
| NXH400N100H4Q2F2SG | onsemi | Insulated Gate Bipolar Transistor, 409A I(C), 1000V V(BR)CES, N-Channel RoHS : Compliant | 6,122 | |||
| NXH200T120H3Q2F2STNG | onsemi | Insulated Gate Bipolar Transistor RoHS : Compliant | 5,960 | |||
| NXH600B100H4Q2F2SG | onsemi | Insulated Gate Bipolar Transistor RoHS : Compliant | 5,533 | |||
| NXH600N65L4Q2F2SG | onsemi | Insulated Gate Bipolar Transistor RoHS : Compliant | 5,037 | |||
| NGTD17R120F2SWK | onsemi | Rectifier Diode, 1 Phase, 1 Element, 1200V V(RRM), Silicon RoHS : Compliant | 4,993 | |||
| SNXH600B100H4Q2F2S1G-S | onsemi | Insulated Gate Bipolar Transistor RoHS : Compliant | 4,184 | |||
| DF2S6.2FS(TPL3) | Toshiba America Electronic Components | Zener Diode, 6.2V V(Z), 6.5%, 0.15W RoHS : Compliant | 465 |
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