| Motore di ricerca datesheet componenti elettronici |
|
N80-R Reseller |
| Reseller | Il numero della parte | Produttore elettronici | Spiegazioni elettronici | Price | Qty. BuyNow | |
![]() Avnet Americas | HRHAFN80R0KB | Vishay Intertechnologies | HRHAFN80R0KB - Boxed Product (Development Kits) (Alt: HRHAFN80R0KB) RoHS : Not Compliant |
| 0 | |
| RWR82N80R6FSRSL | Vishay Intertechnologies | Through Hole Resistor, 80.6 ohm, RWR Series, 1.5 W, ? 1%, Axial Leaded, Wirewound, ? 20ppm/?C - Custom Tape W/Leader (Alt: RWR82N80R6FSRSL) RoHS : Not Compliant |
| 0 | ||
| RWR80N80R0FSB12 | Vishay Intertechnologies | Through Hole Resistor, 80 ohm, RWR Series, 2 W, ? 1%, Axial Leaded, Wirewound, ? 20ppm/?C - Bulk (Alt: RWR80N80R0FSB12) RoHS : Not Compliant |
| 0 | ||
| RWR89N80R6FSB12 | Vishay Intertechnologies | Through Hole Resistor, 80.6 ohm, RWR Series, 3 W, ? 1%, Axial Leaded, Wirewound, ? 20ppm/?C - Bulk (Alt: RWR89N80R6FSB12) RoHS : Not Compliant |
| 0 | ||
| RWR81N80R0DSRSL | Vishay Intertechnologies | EGN-1-80 80 .5% RWR81N80R0DS RSL - Tape and Reel (Alt: RWR81N80R0DSRSL) RoHS : Not Compliant |
| 0 | ||
| RWR81N80R6FRS70 | Vishay Intertechnologies | Through Hole Resistor, 80.6 ohm, RWR Series, 1 W, ? 1%, Axial Leaded, Wirewound, ? 20ppm/?C - Tape and Reel (Alt: RWR81N80R6FRS70) RoHS : Not Compliant |
| 0 | ||
| RWR80N80R6FSS73 | Vishay Intertechnologies | Through Hole Resistor, 80.6 ohm, RWR Series, 2 W, ? 1%, Axial Leaded, Wirewound, ? 20ppm/?C - Tape and Reel (Alt: RWR80N80R6FSS73) RoHS : Not Compliant |
| 0 | ||
| RWR82N80R6FSBSL | Vishay Intertechnologies | Through Hole Resistor, 80.6 ohm, RWR Series, 1.5 W, ? 1%, Axial Leaded, Wirewound, ? 20ppm/?C - Bulk (Alt: RWR82N80R6FSBSL) RoHS : Not Compliant |
| 0 | ||
| M55342K03B6N80RUL | Vishay Intertechnologies | SMD Chip Resistor, 6.8 kohm, ?10%, 200 mW, 1005 [2512 Metric], Thin Film, Established Reliability - Tape and Reel (Alt: M55342K03B6N80RUL) RoHS : Not Compliant |
| 0 | ||
| RWR80N80R6FSS74 | Vishay Intertechnologies | Through Hole Resistor, 80.6 ohm, RWR Series, 2 W, ? 1%, Axial Leaded, Wirewound, ? 20ppm/?C - Tape and Reel (Alt: RWR80N80R6FSS74) RoHS : Not Compliant |
| 0 | ||
| RWR80N80R6BSB12 | Vishay Intertechnologies | Through Hole Resistor, 80.6 ohm, RWR Series, 2 W, ? 0.1%, Axial Leaded, Wirewound, ? 20ppm/?C - Bulk (Alt: RWR80N80R6BSB12) RoHS : Not Compliant |
| 0 | ||
| RWR89N80R6FRS70 | Vishay Intertechnologies | Through Hole Resistor, 80.6 ohm, RWR Series, 3 W, ? 1%, Axial Leaded, Wirewound, ? 20ppm/?C - Tape and Reel (Alt: RWR89N80R6FRS70) RoHS : Not Compliant |
| 0 | ||
| RWR81N80R6FRB12 | Vishay Intertechnologies | Through Hole Resistor, 80.6 ohm, RWR Series, 1 W, ? 1%, Axial Leaded, Wirewound, ? 20ppm/?C - Bulk (Alt: RWR81N80R6FRB12) RoHS : Not Compliant |
| 0 | ||
| RWR81N80R0DSB12 | Vishay Intertechnologies | EGN-1-80 80 .5% RWR81N80R0DS B12 - Bulk (Alt: RWR81N80R0DSB12) RoHS : Not Compliant |
| 0 | ||
| M55342M03B6N80RWB | Vishay Intertechnologies | SMD Chip Resistor, 6.8 kohm, ? 10%, 200 mW, 1005 [2512 Metric], Thin Film, Established Reliability - Waffle Pack (Alt: M55342M03B6N80RWB) RoHS : Not Compliant |
| 0 | ||
![]() Mouser Electronics | IPN80R3K3P7ATMA1 | Infineon Technologies AG | MOSFETs 800V CoolMOS P7PowerTransistor RoHS : Compliant |
| 4,430 | |
| IPN80R4K5P7ATMA1 | Infineon Technologies AG | MOSFETs LOW POWER_NEW RoHS : Compliant |
| 3,000 | ||
| IPN80R600P7ATMA1 | Infineon Technologies AG | MOSFETs LOW POWER_NEW RoHS : Compliant |
| 2,982 | ||
| IPN80R1K2P7ATMA1 | Infineon Technologies AG | MOSFETs LOW POWER_NEW RoHS : Compliant |
| 2,815 | ||
| IPN80R1K4P7ATMA1 | Infineon Technologies AG | MOSFETs LOW POWER_NEW RoHS : Compliant |
| 1,375 | ||
| IPN80R2K4P7ATMA1 | Infineon Technologies AG | MOSFETs LOW POWER_NEW RoHS : Compliant |
| 663 | ||
| HRHAFN80R0KB | Vishay Intertechnologies | Wirewound Resistors - Chassis Mount 80 OHM .1% RoHS : Compliant |
| 4 | ||
| IPAN80R360P7XKSA1 | Infineon Technologies AG | MOSFETs LOW POWER_NEW RoHS : Compliant |
| 0 | ||
| RE77N80R0J01 | Vishay Intertechnologies | Wirewound Resistors - Chassis Mount NH-100 80 1% RE77N80R0 J01 |
| 0 | ||
| RG2012N-80R6-D-T5 | Susumu Co Ltd | Thin Film Resistors - SMD 1/8W 80.6 Ohms 0.5% 0805 10ppm RoHS : Compliant |
| 0 | ||
| RG1608N-80R6-D-T5 | Susumu Co Ltd | Thin Film Resistors - SMD 1/10W 80.6 Ohms 0.5% 0603 10ppm RoHS : Compliant |
| 0 | ||
| RG1608N-80R6-B-T1 | Susumu Co Ltd | Thin Film Resistors - SMD Thin Film Chip Resistors 0603 size, 1/10W, 80.6 ohm, 0.1%, 10ppm RoHS : Compliant |
| 0 | ||
| RG2012N-80R6-B-T1 | Susumu Co Ltd | Thin Film Resistors - SMD Thin Film Chip Resistors 0805 size, 1/8W, 80.6 ohm, 0.1%, 10ppm RoHS : Compliant |
| 0 | ||
| FA-20H 18.00M-A0AANNN80RE0 | Seiko Epson Corporation | Crystals FA-20H 18.00M-A0AANNN80RE0: MHZ XTAL 10PF +/-10PPM +/-20PPM-30 85C ESR=80 OHM DL=100uW 1K T/R |
| 0 | ||
| RG3216N-80R6-B-T1 | Susumu Co Ltd | Thin Film Resistors - SMD Thin Film Chip Resistors 1206 size, 1/4W, 80.6 ohm, 0.1%, 10ppm RoHS : Compliant |
| 0 | ||
![]() Newark | IPN80R1K2P7ATMA1 | Infineon Technologies AG | Mosfet, N-Ch, 800V, 4.5A, 6.8W, Sot-223; |Infineon Technologies IPN80R1K2P7ATMA1 RoHS : Compliant |
| 2,980 | |
| IPN80R1K2P7ATMA1 | Infineon Technologies AG | Mosfet, N-Ch, 800V, 4.5A, 6.8W, Sot-223; |Infineon Technologies IPN80R1K2P7ATMA1 RoHS : Compliant |
| 2,980 | ||
| IPN80R4K5P7ATMA1 | Infineon Technologies AG | Mosfet, N-Ch, 800V, 1.5A, 6W, Sot-223; |Infineon Technologies IPN80R4K5P7ATMA1 RoHS : Compliant |
| 2,531 | ||
| IPN80R4K5P7ATMA1 | Infineon Technologies AG | Mosfet, N-Ch, 800V, 1.5A, 6W, Sot-223; |Infineon Technologies IPN80R4K5P7ATMA1 RoHS : Compliant |
| 2,531 | ||
| IPN80R3K3P7ATMA1 | Infineon Technologies AG | Mosfet, N-Ch, 800V, 1.9A, 6.1W, Sot-223; |Infineon Technologies IPN80R3K3P7ATMA1 RoHS : Compliant |
| 705 | ||
| IPN80R3K3P7ATMA1 | Infineon Technologies AG | Mosfet, N-Ch, 800V, 1.9A, 6.1W, Sot-223; |Infineon Technologies IPN80R3K3P7ATMA1 RoHS : Compliant |
| 705 | ||
| IPN80R2K4P7ATMA1 | Infineon Technologies AG | Mosfet, N-Ch, 800V, 2.5A, 6.3W, Sot-223; |Infineon Technologies IPN80R2K4P7ATMA1 RoHS : Compliant |
| 667 | ||
| IPN80R2K4P7ATMA1 | Infineon Technologies AG | Mosfet, N-Ch, 800V, 2.5A, 6.3W, Sot-223; |Infineon Technologies IPN80R2K4P7ATMA1 RoHS : Compliant |
| 667 | ||
| IPN80R600P7ATMA1 | Infineon Technologies AG | Mosfet, N-Ch, 800V, 8A, 7.4W, Sot-223; |Infineon Technologies IPN80R600P7ATMA1 RoHS : Compliant |
| 420 | ||
| IPN80R600P7ATMA1 | Infineon Technologies AG | Mosfet, N-Ch, 800V, 8A, 7.4W, Sot-223; |Infineon Technologies IPN80R600P7ATMA1 RoHS : Compliant |
| 420 | ||
| IPN80R2K0P7ATMA1 | Infineon Technologies AG | Mosfet, N-Ch, 800V, 3A, 6.4W, Sot-223; |Infineon Technologies IPN80R2K0P7ATMA1 RoHS : Compliant |
| 234 | ||
| IPN80R2K0P7ATMA1 | Infineon Technologies AG | Mosfet, N-Ch, 800V, 3A, 6.4W, Sot-223; |Infineon Technologies IPN80R2K0P7ATMA1 RoHS : Compliant |
| 234 | ||
| RWR82N80R6FSRSL | Vishay Intertechnologies | Res, Vishay Rwr82N80R6Fsrsl; |Vishay RWR82N80R6FSRSL RoHS : Not Compliant |
| 0 | ||
| IPN80R1K4P7ATMA1 | Infineon Technologies AG | Mosfet, N-Ch, 800V, 4A, 7W, Sot-223; |Infineon Technologies IPN80R1K4P7ATMA1 RoHS : Compliant |
| 0 | ||
| IPN80R1K4P7ATMA1 | Infineon Technologies AG | Mosfet, N-Ch, 800V, 4A, 7W, Sot-223; |Infineon Technologies IPN80R1K4P7ATMA1 RoHS : Compliant |
| 0 | ||
![]() RS | CG1BN80R-450Z | SMC Corporation of America | Air Cylinder, CG1-Z SERIES |
| 0 | |
| CG1LN80R-450Z | SMC Corporation of America | AIR CYLINDER, CG1-Z SERIES |
| 0 | ||
| CDG1BN80R-250Z-XC6 | SMC Corporation of America | Air Cylinder, CG1-Z SERIES |
| 0 | ||
| CDG1BN80R-600Z-XC6 | SMC Corporation of America | AIR CYLINDER, CG1-Z SERIES |
| 0 | ||
| CDG1FN80R-250Z-G5BAL-XC6 | SMC Corporation of America | AIR CYLINDER, CG1-Z SERIES |
| 0 | ||
| DFPD-N-80-RP-90-RD-F0507 (8066405) | Festo | ACTUATOR, QTR TRN, AIR, SEMI-ROT DRIVE, 80NM, 90DEG R, DBL ACT, F0507, NPT |
| 0 | ||
| DFPD-N-80-RP-90-RS60-F0507 (8066433) | Festo | ACTUATOR, QTR TRN, AIR, SEMI-ROT DRIVE, 80NM, 90DEG R, SGL ACT, 6 BAR, F1012,NPT |
| 0 | ||
| DFPD-N-80-RP-90-RS30-F0507 (8066432) | Festo | SEMI-ROTARY DRIVE, QUARTER TURN ACTUATOR FOR VALVE, 90 DEG, F0507 FLANGE |
| 0 | ||
| DFPD-N-80-RP-90-RS35-F07-R3-C (8102812) | Festo | SEMI-ROTARY DRIVE, QUARTER TURN ACTUATOR FOR VALVE, 90 DEG, F07 FLANGE |
| 0 | ||
| DFPD-N-80-RP-90-RS60-F07-R3-C (8102814) | Festo | SEMI-ROTARY DRIVE, QUARTER TURN ACTUATOR FOR VALVE, 90 DEG, F07 FLANGE |
| 0 | ||
| DFPD-N-80-RP-90-RS45-F07-R3-C (8102813) | Festo | SEMI-ROTARY DRIVE, QUARTER TURN ACTUATOR FOR VALVE, 90 DEG, F07 FLANGE |
| 0 | ||
| DFPD-N-80-RP-90-RD-F0507-R3-EP (8066411) | Festo | SEMI-ROTARY DRIVE, QUARTER TURN ACTUATOR FOR VALVE, 90 DEG, F0507 FLANGE |
| 0 | ||
| DFPD-N-80-RP-90-RS60-F0507-R3-EP (8066445) | Festo | SEMI-ROTARY DRIVE, QUARTER TURN ACTUATOR FOR VALVE, 90 DEG, F0507 FLANGE |
| 0 | ||
| DFPD-N-80-RP-90-RS30-F0507-R3-EP (8066444) | Festo | SEMI-ROTARY DRIVE, QUARTER TURN ACTUATOR FOR VALVE, 90 DEG, F0507 FLANGE |
| 0 | ||
![]() Rochester Electronics | IPN80R2K4P7ATMA1 | Infineon Technologies AG | Small Signal Field-Effect Transistor, 800V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant |
| 2,063 | |
| IPAN80R280P7XKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 800V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS : Compliant |
| 22,921 | ||
| IPN80R750P7ATMA1 | Infineon Technologies AG | IPN80R750 - 800V CoolMOS N-Channel Power MOSFET RoHS : Compliant |
| 13,088 | ||
| IPN80R2K0P7ATMA1 | Infineon Technologies AG | LOW POWER_NEW RoHS : Compliant |
| 2,750 | ||
| IPN80R900P7ATMA1 | Infineon Technologies AG | 800V CoolMOS P7 Power Transistor RoHS : Compliant |
| 16,936 | ||
| IPN80R3K3P7ATMA1 | Infineon Technologies AG | LOW POWER_NEW RoHS : Compliant |
| 3,970 | ||
| IPN80R4K5P7ATMA1 | Infineon Technologies AG | MOSFET N-Channel 800V 1.5A (Tc) SOT223 T/R RoHS : Compliant |
| 2,645 | ||
| IPN80R600P7ATMA1 | Infineon Technologies AG | Small Signal Field-Effect Transistor, 800V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant |
| 3,684 | ||
| IPN80R1K2P7ATMA1 | Infineon Technologies AG | Small Signal Field-Effect Transistor, 800V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant |
| 4,024 | ||
![]() TME | IPN80R1K4P7ATMA1 | Infineon Technologies AG | Transistor: N-MOSFET; unipolar; 800V; 2.7A; 7W; PG-SOT223; ESD RoHS : Compliant |
| 2,992 | |
| IPN80R4K5P7ATMA1 | Infineon Technologies AG | Transistor: N-MOSFET; unipolar; 800V; 1A; 6W; PG-SOT223; ESD RoHS : Compliant |
| 1,983 | ||
| BN 80-RZ | Schmersal | Reed switch; Range: 2÷60mm; Pswitch: 8W; 13x9x44mm; IP67; 1m; 500mA |
| 4 | ||
| IPN80R900P7ATMA1 | Infineon Technologies AG | Transistor: N-MOSFET; unipolar; 800V; 3.9A; 7W; PG-SOT223; ESD RoHS : Compliant |
| 0 | ||
| IPAN80R360P7XKSA1 | Infineon Technologies AG | Transistor: N-MOSFET; unipolar; 800V; 8.6A; 30W; TO220FP; ESD RoHS : Compliant |
| 0 | ||
| IPN80R750P7ATMA1 | Infineon Technologies AG | Transistor: N-MOSFET; unipolar; 800V; 4.6A; 7.2W; PG-SOT223; ESD RoHS : Compliant |
| 0 | ||
| IPN80R2K4P7ATMA1 | Infineon Technologies AG | Transistor: N-MOSFET; unipolar; 800V; 1.7A; 6.3W; PG-SOT223; ESD RoHS : Compliant |
| 0 | ||
| IPN80R3K3P7ATMA1 | Infineon Technologies AG | Transistor: N-MOSFET; unipolar; 800V; 1.3A; 6.1W; PG-SOT223; ESD RoHS : Compliant |
| 0 | ||
| IPN80R1K2P7ATMA1 | Infineon Technologies AG | Transistor: N-MOSFET; unipolar; 800V; 3.1A; 6.8W; PG-SOT223; ESD RoHS : Compliant |
| 0 | ||
| IPN80R600P7ATMA1 | Infineon Technologies AG | Transistor: N-MOSFET; unipolar; 800V; 5.5A; 7.4W; PG-SOT223; ESD RoHS : Compliant |
| 0 | ||
![]() Ameya Holding Limited | IPN80R900P7ATMA1 | Infineon Technologies AG | Single N-Channel 800 V 900 mOhm 15 nC CoolMOS™ Power Mosfet - SOT-223 RoHS : Compliant | 151 | ||
![]() Rutronik | IPN80R2K0P7ATMA1 | Infineon Technologies AG | N-CH 800V 3A 2000mOhm SOT-223 RoHS : Compliant |
| 3,000 | |
![]() Chip 1 Exchange | RM04FTN80R6 | TA-I Technology Co Ltd | INSTOCK RoHS : Compliant | 7,042 | ||
| RM06FTN80R6 | TA-I Technology Co Ltd | INSTOCK RoHS : Compliant | 3,288 | |||
![]() EBV Elektronik | IPN80R1K4P7ATMA1 | Infineon Technologies AG | Transistor MOSFET NCH 800V 4A 3Pin SOT223 TR (Alt: SP001657528) RoHS : Compliant | 15,000 | ||
| IPN80R2K4P7ATMA1 | Infineon Technologies AG | Transistor MOSFET NCH 800V 25A 3Pin SOT223 TR (Alt: SP001664994) RoHS : Compliant | 0 | |||
| IPN80R3K3P7ATMA1 | Infineon Technologies AG | Transistor MOSFET NCH 800V 19A 3Pin SOT223 TR (Alt: SP001664992) RoHS : Compliant | 0 | |||
| IPN80R4K5P7ATMA1 | Infineon Technologies AG | Power MOSFET N Channel 800 V 15 A 38 ohm SOT223 Surface Mount (Alt: SP001657536) RoHS : Compliant | 0 | |||
| IPN80R600P7ATMA1 | Infineon Technologies AG | Trans MOSFET NCH 800V 8A 3Pin SOT223 TR (Alt: SP001665004) RoHS : Compliant | 0 | |||
| IPN80R1K2P7ATMA1 | Infineon Technologies AG | Transistor MOSFET NCH 800V 45A 3Pin SOT223 TR (Alt: SP001664998) RoHS : Compliant | 0 | |||
| IPAN80R360P7XKSA1 | Infineon Technologies AG | Transistor MOSFET NCH 800V 13A 3Pin TO220FP Tube (Alt: SP001702158) RoHS : Compliant | 0 | |||
![]() Master Electronics | CCS-32N80-R | Teledyne Coax Switches | RoHS : Compliant |
| 0 | |
![]() Venkel Ltd. | MELFC0204-TN-80R6BT | VENKEL LTD | MELF Coated Thin Film CR;0204;1/4W;�10PPM;80.6R;�0.1% RoHS : Compliant | 0 | ||
| HPTF1210-UN-80R6AT | VENKEL LTD | High Power Thin Film CR;1210;1/3W;�10PPM;80.6R;�0.05% RoHS : Compliant | 0 | |||
| UPTF0402-16W-N-80R6BT-1K | VENKEL LTD | Ultra Precision Thin Film CR;0402;1/16W;�10PPM;80.6R;�0.1% RoHS : Compliant | 0 | |||
| UPTF0402-16W-N-80R6UT | VENKEL LTD | Ultra Precision Thin Film CR;0402;1/16W;�10PPM;80.6R;�0.01% RoHS : Compliant | 0 | |||
| HPTF0805-RN-80R6BT | VENKEL LTD | High Power Thin Film CR;0805;1/8W;�10PPM;80.6R;�0.1% RoHS : Compliant | 0 | |||
| HPTF2512-WN-80R6BT | VENKEL LTD | High Power Thin Film CR;2512;3/4W;�10PPM;80.6R;�0.1% RoHS : Compliant | 0 | |||
| MELFC0204-TN-80R6FT | VENKEL LTD | MELF Coated Thin Film CR;0204;1/4W;�10PPM;80.6R;�1% RoHS : Compliant | 0 | |||
| MELFC0204-ZN-80R6DT | VENKEL LTD | MELF Coated Thin Film CR;0204;2/5W;�10PPM;80.6R;�0.5% RoHS : Compliant | 0 | |||
| UPTF0603-16W-N-80R6BT | VENKEL LTD | Ultra Precision Thin Film CR;0603;1/16W;�10PPM;80.6R;�0.1% RoHS : Compliant | 0 | |||
| UPTF0805-10W-N-80R6CT-1K | VENKEL LTD | Ultra Precision Thin Film CR;0805;1/10W;�10PPM;80.6R;�0.25% RoHS : Compliant | 0 | |||
| HPTF0603-QN-80R6UT | VENKEL LTD | High Power Thin Film CR;0603;1/10W;�10PPM;80.6R;�0.01% RoHS : Compliant | 0 | |||
| HPTF0805-RN-80R6FT | VENKEL LTD | High Power Thin Film CR;0805;1/8W;�10PPM;80.6R;�1% RoHS : Compliant | 0 | |||
| HPTF2512-WN-80R6FT | VENKEL LTD | High Power Thin Film CR;2512;3/4W;�10PPM;80.6R;�1% RoHS : Compliant | 0 | |||
| MELFC0207-VN-80R6DT | VENKEL LTD | MELF Coated Thin Film CR;0207;1/2W;�10PPM;80.6R;�0.5% RoHS : Compliant | 0 | |||
| UPTF0805-10W-N-80R6AT | VENKEL LTD | Ultra Precision Thin Film CR;0805;1/10W;�10PPM;80.6R;�0.05% RoHS : Compliant | 0 | |||
![]() Vyrian | IPN80R1K4P7ATMA1 | Infineon Technologies AG | Small Signal Field-Effect Transistor, 800V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 12,461 | ||
| IPAN80R360P7XKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 800V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS : Compliant | 12,277 | |||
![]() Win Source Electronics | IPN80R3K3P7 | Infineon Technologies AG | 800V 1.9A 3V 6.1W 3.3Ω@10V 1 N-channel SOT-223-3 Single FETs, MOSFETs RoHS RoHS : Compliant |
| 4,000 | |
| IPN80R3K3P7ATMA1 | Infineon Technologies AG | RoHS : Compliant |
| 3,630 |
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