| Motore di ricerca datesheet componenti elettronici |
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S4LC-S23-R/ Reseller |
| Reseller | Il numero della parte | Produttore elettronici | Spiegazioni elettronici | Price | Qty. BuyNow | |
![]() PEI Genesis | GF2M2FCDS4L/AA | Amphenol Positronic |
| 0 | ||
| S4100E11W6.0S4L01 | SOURIAU-SUNBANK |
| 0 | |||
| GF1M1FADS4L/AA | Amphenol Positronic |
| 0 | |||
![]() Powell Electronics | 13C5000PS4L/S76106 | Honeywell Sensing and Control | Switch |
| 24 | |
| M28840/12AE1S4-LC | Amphenol PCD | D SUB CONNECTOR |
| 13 | ||
| CNF08-S4LP0-BP5 | Altech Corporation | Field-Wired Conn., M8, Female, Straight, |
| 9 | ||
| 13C1000PS4L/S76105 | Honeywell Sensing and Control | Switch |
| 5 | ||
![]() Rutronik | IPG20N04S4L08ATMA1 | Infineon Technologies AG | Dual N-CH 40V 20A 7,2mOhm TDSON-8 RoHS : Compliant |
| 35,000 | |
| IPD50N04S4L08ATMA1 | Infineon Technologies AG | MOSFET 40V 7.3mOHM AECQ TO252 RoHS : Compliant |
| 10,000 | ||
IPD50N06S4L08ATMA2![]() | Infineon Technologies AG | N-CH 60V 50A 7,8mOhm TO252 RoHS : Compliant |
| 10,000 | ||
| IPG20N10S4L35AATMA1 | Infineon Technologies AG | Dual N-CH 100V 20A 22mOhm SSO8 RoHS : Compliant |
| 5,000 | ||
| IPD90N04S4L04ATMA1 | Infineon Technologies AG | MOSFET 40V 3.8mOHM AECQ TO252 RoHS : Compliant |
| 5,000 | ||
IPG20N04S4L11AATMA1![]() | Infineon Technologies AG | DUAL N-CH 40V 20A 10,1mOhm RoHS : Compliant |
| 5,000 | ||
IPD90N06S4L03ATMA2![]() | Infineon Technologies AG | N-CH 60V 90A 3,5mOhm TO252-3-11 RoHS : Compliant |
| 2,500 | ||
IPD30N06S4L23ATMA2![]() | Infineon Technologies AG | N-CH 60V 30A 23mOhm TO252 RoHS : Compliant |
| 2,500 | ||
| IPD90N03S4L03ATMA1 | Infineon Technologies AG | MOSFET 30V 3.3mOHM AECQ TO252 RoHS : Compliant |
| 2,500 | ||
IPD90N06S4L06ATMA2![]() | Infineon Technologies AG | N-CH 60V 90A 6,3mOhm TO252-3-11 RoHS : Compliant |
| 2,500 | ||
IPD25N06S4L30ATMA2![]() | Infineon Technologies AG | N-CH 60V 25A 30mOhm TO252 RoHS : Compliant |
| 2,500 | ||
IPB80N06S4L07ATMA2![]() | Infineon Technologies AG | N-CH 60V 80A 5,2mOHM AECQ TO263 RoHS : Compliant |
| 1,000 | ||
IPB180N04S4LH0ATMA1![]() | Infineon Technologies AG | N-CH 30V 180A 9,5mOhm TO263-7 RoHS : Compliant |
| 1,000 | ||
IPB90N06S4L04ATMA2![]() | Infineon Technologies AG | N-CH 60V 80A 3,4mOhm TO263 RoHS : Compliant |
| 1,000 | ||
![]() Chip 1 Exchange | IPD50N04S4L-08![]() | Infineon Technologies AG | INSTOCK RoHS : Compliant | 175,000 | ||
| IPG20N04S4L-11 | Infineon Technologies AG | INSTOCK RoHS : Compliant | 45,000 | |||
| IPD90N03S4L02ATMA1 | Infineon Technologies AG | INSTOCK RoHS : Compliant | 11,995 | |||
| IPG20N06S4L-26 | Infineon Technologies AG | INSTOCK RoHS : Compliant | 5,000 | |||
| IPG20N04S4L11ATMA1 | Infineon Technologies AG | INSTOCK RoHS : Compliant | 3,000 | |||
| IPD50N03S4L06ATMA1 | Infineon Technologies AG | INSTOCK RoHS : Compliant | 2,500 | |||
| IPD50N03S4L06ATMA1 | INSTOCK | 2,500 | ||||
| WBC3RT3S4L | Philips Semiconductors | INSTOCK | 1,000 | |||
IPD50N06S4L-08![]() | Infineon Technologies AG | INSTOCK RoHS : Compliant | 921 | |||
IPD50N06S4L08ATMA2![]() | Infineon Technologies AG | INSTOCK RoHS : Compliant | 921 | |||
M37710S4LHP![]() | Mitsubishi Electric | INSTOCK RoHS : Not Compliant | 600 | |||
| IPG20N06S4L-2 | INSTOCK | 226 | ||||
| AS4LC256K16E050JC | INSTOCK | 107 | ||||
![]() Avnet Asia | KW SITRA1.KD-GPGS-DK40DL44-KN-N4S4-L-XX | ams OSRAM Group | OOSKW SITRA1.KD-GPGS-DK40DL44-KN-N4S4-L- (Alt: KW SITRA1.KD-GPGS-DK40DL44-KN-N4S4-L-XX) RoHS : Compliant | 0 | ||
| KW SITRA1.KD-GQGT-DL25DM29-JM-N4S4-L-XX | ams OSRAM Group | (Alt: KW SITRA1.KD-GQGT-DL25DM29-JM-N4S4-L-XX) RoHS : Compliant | 0 | |||
| KW SITRA1.KD-GQGT-DL25DM29-KN-N4S4-L-XX | ams OSRAM Group | OOSKW SITRA1.KD-GQGT-DL25DM29-KN-N4S4-L- (Alt: KW SITRA1.KD-GQGT-DL25DM29-KN-N4S4-L-XX) RoHS : Compliant | 0 | |||
| KW SITRA1.KD-GPGS-DK40DL44-JM-N4S4-L-XX | ams OSRAM Group | (Alt: KW SITRA1.KD-GPGS-DK40DL44-JM-N4S4-L-XX) RoHS : Compliant | 0 | |||
| KW SITRA1.KD-GQGT-DL27DM31-JM-N4S4-L-XX | ams OSRAM Group | (Alt: KW SITRA1.KD-GQGT-DL27DM31-JM-N4S4-L-XX) RoHS : Compliant | 0 | |||
| KW SITRA1.KD-GRGU-DK38DL42-JM-N4S4-L-XX | ams OSRAM Group | (Alt: KW SITRA1.KD-GRGU-DK38DL42-JM-N4S4-L-XX) RoHS : Compliant | 0 | |||
| KW SITRA1.KD-GQGT-DL34DM38-JM-N4S4-L-XX | ams OSRAM Group | (Alt: KW SITRA1.KD-GQGT-DL34DM38-JM-N4S4-L-XX) RoHS : Compliant | 0 | |||
| KW SITRA1.KD-GQGT-DK38DL42-JM-N4S4-L-XX | ams OSRAM Group | OOSKW SITRA1.KD-GQGT-DK38DL42-JM-N4S4-L- (Alt: KW SITRA1.KD-GQGT-DK38DL42-JM-N4S4-L-XX) RoHS : Compliant | 0 | |||
![]() Avnet Silica | D3V3L4BS4LP1308-7 | Diodes Incorporated | (Alt: D3V3L4BS4LP1308-7) RoHS : Compliant | 0 | ||
| HFJ11-2450E-S4LS12RL | Halo Electronics Inc | FASTJACK 1x1 TabDown 10100BASETX RJ45 (Alt: HFJ11-2450E-S4LS12RL) RoHS : Compliant | 0 | |||
| HFJ11-E1G16E-S4L55RL | Halo Electronics Inc | HLOHFJ11E1G16ES4L55RL (Alt: HFJ11-E1G16E-S4L55RL) RoHS : Compliant | 0 | |||
| CXB1830-0000-000N0ZS4L5A | Cree, Inc. | XLamp CXA GEN 2 Light Emitting Diode White (Alt: CXB1830-0000-000N0ZS4L5A) RoHS : Compliant | 0 | |||
| CXB2530-0000-000N0ZS4L5A | Cree, Inc. | XLamp CXA GEN 2 Light Emitting Diode White (Alt: CXB2530-0000-000N0ZS4L5A) RoHS : Compliant | 0 | |||
![]() Braemac Americas-Symmetry | STS4L-AD1B-R3 | Sensirion | STS4L-AD1B-R3 Temp. IC RoHS : Compliant |
| 0 | |
![]() Component Electronics, Inc | AWS4LS | IN STOCK SHIP TODAY |
| 3,100 | ||
| IPG20N04S4L08ATMA1 | Infineon Technologies AG | IN STOCK SHIP TODAY RoHS : Compliant |
| 24 | ||
| AS4LC1M16E5-50TC | Alliance Memory Inc | IN STOCK SHIP TODAY |
| 24 | ||
| AS4LC1M16E5-60TC | Alliance Memory Inc | IN STOCK SHIP TODAY |
| 6 | ||
![]() DB Roberts | KN4C----5S4L-21 | Essentra Components | CLAMPING STAR KNOB 2.250 IN DI | 0 | ||
![]() EBV Elektronik | IPD90N03S4L03ATMA1 | Infineon Technologies AG | Trans MOSFET NCH 30V 90A 3Pin2Tab TO252 (Alt: SP000274978) RoHS : Compliant | 285,000 | ||
| IPD30N03S4L09ATMA1 | Infineon Technologies AG | Trans MOSFET NCH 30V 30A 3Pin2Tab TO252 (Alt: SP000415578) RoHS : Compliant | 95,000 | |||
IPD50N06S4L08ATMA2![]() | Infineon Technologies AG | Trans MOSFET NCH 60V 50A 3Pin TO252 TR (Alt: SP001028664) RoHS : Compliant | 50,000 | |||
| IPD90N03S4L02ATMA1 | Infineon Technologies AG | (Alt: SP000273284) RoHS : Compliant | 17,500 | |||
IPB160N04S4LH1ATMA1![]() | Infineon Technologies AG | Trans MOSFET NCH 40V 160A 7Pin TO263 TR (Alt: SP000979640) RoHS : Compliant | 12,000 | |||
| IPB80N04S4L04ATMA1 | Infineon Technologies AG | Trans MOSFET NCH 40V 80A 3Pin2Tab TO263 (Alt: SP000646180) RoHS : Compliant | 10,000 | |||
| IPD70N03S4L04ATMA1 | Infineon Technologies AG | Trans MOSFET NCH 30V 30A 3Pin2Tab TO252 (Alt: SP000274986) RoHS : Compliant | 5,000 | |||
IPD50N06S4L12ATMA2![]() | Infineon Technologies AG | Power MOSFET N Channel 60 V 50 A 0012 ohm TO252 DPAK Surface Mount (Alt: SP001028640) RoHS : Compliant | 2,500 | |||
| IPD90N10S4L06ATMA1 | Infineon Technologies AG | Power MOSFET N Channel 100 V 90 A 00058 ohm TO252 DPAK Surface Mount (Alt: SP000866562) RoHS : Compliant | 2,500 | |||
| IPD50N03S4L06ATMA1 | Infineon Technologies AG | Power MOSFET N Channel 30 V 50 A 00049 ohm TO252 DPAK Surface Mount (Alt: SP000415580) RoHS : Compliant | 2,500 | |||
| IPD90N04S4L04ATMA1 | Infineon Technologies AG | Trans MOSFET NCH 40V 90A 3Pin2Tab TO252 (Alt: SP000646188) RoHS : Compliant | 2,500 | |||
IPB120N04S4L02ATMA1![]() | Infineon Technologies AG | (Alt: SP000979924) RoHS : Compliant | 1,000 | |||
IPB80N06S4L07ATMA2![]() | Infineon Technologies AG | Trans MOSFET NCH 60V 80A 3Pin TO263 TR (Alt: SP001028674) RoHS : Compliant | 0 | |||
IPD90N06S4L03ATMA2![]() | Infineon Technologies AG | Power MOSFET N Channel 60 V 90 A 00027 ohm TO252 DPAK Surface Mount (Alt: SP001028764) RoHS : Compliant | 0 | |||
| IPG20N04S4L08AATMA1 | Infineon Technologies AG | Transistor MOSFET Array Dual NCH 40V 20A 8Pin TDSON TR (Alt: SP001265576) RoHS : Compliant | 0 | |||
![]() FDH Electronics | BLS4LA17S | AFTRMK | Aftermarket | 50 | ||
| MWDM2L-37S-4L7-24L | Glenair Inc | Connector | 0 | |||
![]() Maritex | IPG20N04S4L-11 | Infineon Technologies AG | MOSFETs; IPG20N04S4L-11; INFINEON TECHNOLOGIES; 40 V; 20 A; 16 V; 41 W RoHS : Compliant |
| 3,418 | |
| IPD50N06S4L-12 | VBsemi Electronics Co Ltd | MOSFETs; IPD50N06S4L-12; VBSEMI; 60 V; 50 A; 16 V; 50 W |
| 2,380 | ||
IPD90N04S4L-04![]() | Infineon Technologies AG | MOSFETs; IPD90N04S4L-04; INFINEON TECHNOLOGIES; 40 V; 90 A; 20 V; 71 W RoHS : Compliant |
| 2,083 | ||
| IPG20N04S4L-11A | Infineon Technologies AG | MOSFETs; IPG20N04S4L-11A; INFINEON TECHNOLOGIES; 40 V; 20 A; 16 V; 41 W RoHS : Compliant |
| 97 | ||
| IPD30N06S4L-23 | VBsemi Electronics Co Ltd | MOSFETs; IPD30N06S4L-23; VBSEMI; 60 V; 30 A; 16 V; 36 W |
| 85 | ||
![]() Vyrian | IPB180N04S4LH0ATMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 180A I(D), 40V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 11,649 | ||
| IPB80N06S4L07ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 60V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant | 10,973 | |||
| IPP80N06S4L05AKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 60V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB RoHS : Compliant | 10,878 | |||
| IPB90N06S4L04ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 90A I(D), 60V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant | 9,909 | |||
| IPI22N03S4L15AKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 22A I(D), 30V, 0.0149ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-262AA RoHS : Compliant | 8,441 | |||
IPB120N03S4L03ATMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 120A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant | 7,722 | |||
| IPB22N03S4L15ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 22A I(D), 30V, 0.0146ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant | 6,930 | |||
| IPP22N03S4L15AKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 22A I(D), 30V, 0.0149ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB RoHS : Compliant | 6,408 | |||
| IPB45N04S4L08ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 45A I(D), 40V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-263 RoHS : Compliant | 5,641 | |||
| IPD90N06S4L06ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 90A I(D), 60V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252 RoHS : Compliant | 5,550 | |||
| KVR13LR9S4L | Kingston Technology Company | 4,594 | ||||
| IPI45N06S4L08AKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 45A I(D), 60V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS : Compliant | 4,582 | |||
| IPD90N06S4L03ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 90A I(D), 60V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252 RoHS : Compliant | 4,399 | |||
| IPB80N06S4L05ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 80A I(D), 60V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant | 3,906 | |||
| KSM32RS4L/32MFR | Kingston Technology Company | 3,052 | ||||
![]() Win Source Electronics | IPG20N10S4L-22 | Infineon Technologies AG | Trans MOSFET N-CH 100V 20A Automotive 8-Pin TDSON EP T/R / OptiMOS™-T2 Power-Transistor RoHS : Compliant |
| 125,967 | |
IPD30N06S4L23ATMA2![]() | Infineon Technologies AG | MOSFET N-CH 60V 30A TO252-31 / N-Channel 60 V 30A (Tc) 36W (Tc) Surface Mount PG-TO252-3-11 RoHS : Compliant |
| 73,550 | ||
| IPG20N06S4L-26 | Infineon Technologies AG | OptiMOS-T2 Power-Transistor RoHS : Compliant |
| 66,000 | ||
IPD50N06S4L-08![]() | Infineon Technologies AG | OptiMOS-T2 Power-Transistor RoHS : Compliant |
| 30,000 | ||
| ITD50N04S4L-07 | Infineon Technologies AG | RoHS : Compliant |
| 25,000 | ||
| ITD50N04S4L07ATMA1 | Infineon Technologies AG | ITD50N04 - 20V-40V N-CHANNEL AUT RoHS : Compliant |
| 25,000 | ||
IPD30N06S4L-23![]() | Infineon Technologies AG | OptiMOS-T2 Power-Transistor RoHS : Compliant |
| 20,555 | ||
| IPD25N06S4L-30 | Infineon Technologies AG | OptiMOS-T2 Power-Transistor RoHS : Compliant |
| 20,000 | ||
| IPD60N10S4L-12 | Infineon Technologies AG | OptiMOSTM-T2 Power-Transistor RoHS : Compliant |
| 20,000 | ||
IPD50N06S4L12ATMA2![]() | Infineon Technologies AG | MOSFET N-CH 60V 50A TO252-31 RoHS : Compliant |
| 17,000 | ||
| IPD60N10S4L12ATMA1 | Infineon Technologies AG | MOSFET N-CH 100V 60A TO252-3 / N-Channel 100 V 60A (Tc) 94W (Tc) Surface Mount PG-TO252-3-313 RoHS : Compliant |
| 15,000 | ||
IPD90N03S4L-02![]() | Infineon Technologies AG | MOSFET N-CH 30V 90A TO252-3 RoHS : Compliant |
| 12,450 | ||
| IPG20N10S4L22ATMA1 | Infineon Technologies AG | MOSFET 2N-CH 8TDSON RoHS : Compliant |
| 10,000 | ||
| IPG20N06S4L26ATMA1 | Infineon Technologies AG | MOSFET 2N-CH 60V 20A TDSON-8 / Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R RoHS : Compliant |
| 9,939 | ||
| IPG20N06S4L-26A | Infineon Technologies AG | OptiMOS™-T2 Power-Transistor RoHS : Compliant |
| 3,006 |
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