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Motore di ricerca datesheet componenti elettronici |
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Motore di ricerca datesheet componenti elettronici |
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VS2-B3D-R/ Reseller |
| Reseller | Il numero della parte | Produttore elettronici | Spiegazioni elettronici | Price | Qty. BuyNow | |
 ComSIT USA | VS2EJH02HM36A | Vishay Intertechnologies | AVAILABLE EU | 296,980 | ||
| VTVS25GSMFM308 | VISHAY INTERTECHNOLOGY INC | AVAILABLE EU | 57 | |||
| PTVS24VP1UP115 | Nexperia | AVAILABLE EU | 4,041 | |||
 NexGen Digital | PTVS22VS1UR,115 | Nexperia | RoHS : Compliant | 1,530 | ||
PTVS26VZ1USKYL | Nexperia | RoHS : Compliant | 779 | |||
 PEI Genesis | LVS200H | ITT Interconnect Solutions |
| 0 | ||
 PUI | CBW58-VS-25A-5HD | 500 | ||||
| CBW58-VS-20A-1B | 56 | |||||
 Chip-Germany GmbH | SIOV-S20K115 | TDK Corporation | RoHS : Unknown | 251 | ||
 Vyrian | MRFE6VS25GN-960 | NXP Semiconductors | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, N-Channel, Metal-oxide Semiconductor FET RoHS : Not Compliant | 7,147 | ||
| MT18HVS25672CHY-53EXX | Micron Technology Inc | DDR DRAM Module, 256MX72, CMOS | 7,072 | |||
| MT18HVS25672KY-667A1 | Micron Technology Inc | Memory IC, 256MX72, CMOS, PDMA244 RoHS : Compliant | 6,980 | |||
MT18HVS25672PKIY-667XX | Micron Technology Inc | Synchronous DRAM Module, 256MX8, CMOS RoHS : Compliant | 6,628 | |||
| MT18HVS25672KY-53EA1 | Micron Technology Inc | DRAM, 256MX72, 0.5ns, CMOS, PDMA244 RoHS : Compliant | 6,430 | |||
| MT18HVS25672KY-80EXX | Micron Technology Inc | Synchronous DRAM Module, 256MX8, CMOS RoHS : Compliant | 6,191 | |||
| MT18HVS25672PKIY-80EXX | Micron Technology Inc | Synchronous DRAM Module, 256MX8, CMOS RoHS : Compliant | 5,931 | |||
| MT18HVS25672CHY-40EXX | Micron Technology Inc | DDR DRAM Module, 256MX72, CMOS | 5,796 | |||
| MT18HVS25672PKIZ-667XX | Micron Technology Inc | DDR2 DRAM Module, 256MX72, CMOS | 5,706 | |||
| MT18HVS25672KY-80EA1 | Micron Technology Inc | DRAM, 256MX72, 0.4ns, CMOS, PDMA244 RoHS : Compliant | 5,450 | |||
| MT18HVS25672KY-53EXX | Micron Technology Inc | Synchronous DRAM Module, 256MX8, CMOS RoHS : Compliant | 5,172 | |||
| MT18HVS25672CHY-53EE1 | Micron Technology Inc | DDR DRAM Module, 256MX72, CMOS RoHS : Compliant | 2,844 | |||
| MRFE6VS25LR5 | NXP Semiconductors | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET RoHS : Compliant | 2,777 | |||
| MT18HVS25672CHY-667XX | Micron Technology Inc | DDR DRAM Module, 256MX72, CMOS | 2,748 | |||
| MT18HVS25672KY-667XX | Micron Technology Inc | Synchronous DRAM Module, 256MX8, CMOS RoHS : Compliant | 2,532 |
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