TMS320VC5471 datasheet(81/97 Pages) TI

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Electrical Specifications

June 2001 – Revised December 2002

SPRS180C

6.12 Synchronous DRAM Timings

Table 6–28 and Table 6–29 assume testing over recommended operating conditions (see Figure 6–23

through Figure 6–29).

Table 6–28. Synchronous DRAM Timing Requirements

NO.

MIN

MAX

UNIT

tsu(DV-SCLKH)

Setup time, read data valid before SDRAM_CLK high

4.5

th(SCLKH-DV)

Hold time, read data valid after SDRAM_CLK high

Table 6–29. Synchronous DRAM Switching Characteristics

NO.

PARAMETER

MIN

MAX

UNIT

td(SCLKH-CSV)

Delay time, SDRAM_CLK high to chip select valid

0.5

td(SCLKH-DQMV)

Delay time, SDRAM_CLK high to byte enable valid

0.5

td(SCLKH-DQMIV)

Delay time, SDRAM_CLK high to byte enable invalid

0.5

td(SCLKH-AV)

Delay time, SDRAM_CLK high to address valid

0.5

td(SCLKH-AIV)

Delay time, SDRAM_CLK high to address invalid

0.5

td(SCLKH-CASV)

Delay time, SDRAM_CLK high to SDRAM_CAS valid

0.5

td(SCLKH-DV)

Delay time, SDRAM_CLK high to data valid

0.5

td(SCLKH-DIV)

Delay time, SDRAM_CLK high to data invalid

0.5

td(SCLKH-WEV)

Delay time, SDRAM_CLK high to SDRAM_WE valid

0.5

td(SCLKH-RASV)

Delay time, SDRAM_CLK high to, SDRAM_RAS valid

0.5

SDRAM_CLK

CSn

SDRAM_DQM[3:0]

SDRAM_A[C:0]†

DATA[31:00]

SDRAM_A[10]†

SDRAM_RAS

SDRAM_CAS

SDRAM_WE

SDRAM_A[R:0]†

BE1

BE2

BE3

BE4

Bank

Column

READ

† The values for R and C depend on the particular size of the SRAMs used.

Figure 6–23. SDRAM Read Command (CAS Latency 3)

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