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TPW65R080C Scheda tecnica(PDF) 2 Page - Wuxi Unigroup Microelectronics Company

Il numero della parte TPW65R080C
Spiegazioni elettronici  650V Super-Junction Power MOSFET
PDF  8 Pages
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Produttore elettronici  WUMC [Wuxi Unigroup Microelectronics Company]
Homepage  http://www.tsinghuaicwx.com/en/index.asp
Logo WUMC - Wuxi Unigroup Microelectronics Company

TPW65R080C Scheda tecnica(HTML) 2 Page - Wuxi Unigroup Microelectronics Company

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TPV65R080C, TPW65R080C
V3.0
www.tsinghuaicwx.com
Wuxi Unigroup Microelectronics Company
Specifications T
J = 25ºC, unless otherwise noted
Parameter
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS = 0V, ID = 250µA
650
--
--
V
Zero Gate Voltage Drain Current
I
DSS
V
DS = 650V, VGS = 0V, TJ = 25º
C
--
--
1
μA
V
DS = 650V, VGS = 0V, TJ = 150ºC
--
--
100
Gate-Source Leakage
I
GSS
V
GS = ±30V
--
--
±100
nA
Gate-Source Threshold Voltage
V
GS(th)
V
DS = VGS, ID = 250µA
2.5
--
4.5
V
Drain-Source On-Resistance (Note3)
R
DS(on)
V
GS = 10V, ID = 20A
--
65
80
mΩ
Forward Transconductance
(Note3)
g
fs
V
DS = 10V, ID = 20A
--
40
--
S
Dynamic
Input Capacitance
C
iss
V
GS = 0V,
V
DS = 50V,
f = 1.0MHz
--
5098
--
pF
Output Capacitance
C
oss
--
225
--
Reverse Transfer Capacitance
C
rss
--
6.2
--
Total Gate Charge
Q
g
V
DD = 520V, ID = 47A,
V
GS = 10V
--
90
--
nC
Gate-Source Charge
Q
gs
--
24
--
Gate-Drain Charge
Q
gd
--
30
--
Turn-on Delay Time
t
d(on)
V
DD = 400V, ID = 26A,
R
G = 1.7Ω
--
16
--
ns
Turn-on Rise Time
t
r
--
12
--
Turn-off Delay Time
t
d(off)
--
83
--
Turn-off Fall Time
t
f
--
5
--
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
I
S
T
C = 25º
C
--
--
47
A
Pulsed Diode Forward Current
I
SM
--
--
141
Body Diode Voltage
V
SD
T
J = 25º
C, I
SD = 47A, VGS = 0V
--
0.9
1.2
V
Reverse Recovery Time
t
rr
V
R = 400V, IF = 26A,
di
F/dt = 100A/μs
--
720
--
ns
Reverse Recovery Charge
Q
rr
--
19
--
μC
Peak Reverse Recovery Current
I
rrm
--
52
--
A
Notes
1.
Repetitive Rating: Pulse Width limited by maximum junction temperature
2.
I
AS = 15A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3.
Pulse Test: Pulse Width
≤ 300μs, Duty Cycle ≤ 1%
2



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