LMH6704MF datasheet(10/12 Pages) NSC

10 / 12 page

Application Information (Continued)

MAX = (150˚ – TAMB)/

JA, where TAMB = Ambient tempera-

ture (˚C) and

JA = Thermal resistance, from junction to

ambient, for a given package (˚C/W). For the SOT23-6 pack-

age

JA is 187˚C/W.

ESD PROTECTION

The LMH6704 is protected against electrostatic discharge

(ESD) on all pins. The LMH6704 will survive 2000V Human

Body model and 200V Machine model events. Input and

Output pins have ESD diodes to either supply pin (V

+ and

−) which are reverse biased and essentially have no effect

under most normal operating conditions. There are occa-

sions, however, when the ESD diodes will be evident. If the

LMH6704 is driven by a large signal while the device is

powered down, the ESD diodes might enter forward operat-

ing region and conduct. The current that flows through the

ESD diodes will either exit the chip through the supply pins

or will flow through the device, hence it is possible to inad-

vertently power up the LMH6704 with a large signal applied

to the input pins. Shorting the power pins to each other will

prevent the chip from being powered up through the input.

LMH6704MF Scheda tecnica(PDF) 10 Page - National Semiconductor (TI)