IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

6,306,728B1

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

Figure 7. Gate Charge

Figure 8. Capacitance Curves

Figure 9. Forward Voltage Drop of the

Intrinsic Diode

Figure10. Forward Bias Safe Operating Area

IXFX 50N50

IXFX 55N50

Pulse Width - Seconds

0.00

0.01

0.10

1.00

0.2

0.4

0.6

0.8

1.0

0

20

40

60

80

100

T

T

Gate Charge - nC

0

50

100

150

200

250

300

350

0

2

4

6

8

10

12

V

I

V

0

5

10

15

20

25

30

35

40

100

1000

10000

Crss

Coss

Ciss

f = 1MHz