DMP2225L

Document number: DS31461 Rev. 7 - 3

2 of 6

www.diodes.com

December 2017

© Diodes Incorporated

DMP2225L

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

-20

V

Gate-Source Voltage

±12

V

Continuous Drain Current (Note 6)

Steady

State

-2.6

-2

A

Pulsed Drain Current (Note 7)

8

A

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 6)

1.08

W

115

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

-20

—

—

V

Zero Gate Voltage Drain Current

—

—

-800

nA

On-State Drain Current

-6

—

—

A

-3

—

—

Gate-Source Leakage

—

—

±80

nA

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

-0.45

—

-1.25

V

Static Drain-Source On-Resistance

—

80

165

110

225

mΩ

Forward Transfer Admittance

—

4

—

s

Diode Forward Voltage (Note 7)

—

—

-1.26

V

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

—

250

—

pF

f = 1.0MHz

Output Capacitance

—

88

—

pF

Reverse Transfer Capacitance

—

58

—

pF

Gate Resistance

—

12

16

Ω

Total Gate Charge

—

4.3

5.3

nC

Gate-Source Charge

—

0.9

—

Gate-Drain Charge

—

2.1

—

Notes:

6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

7. Repetitive rating, pulse width limited by junction temperature.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to production testing.

NOT RECOMMENDED FOR NEW DESIGN

USE DMP2120U