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DMP3026SFDF Scheda tecnica(PDF) 3 Page - Diodes Incorporated |
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DMP3026SFDF Scheda tecnica(HTML) 3 Page - Diodes Incorporated |
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3 / 8 page ![]() DMP3026SFDF Document number: DS38678 Rev. 1 - 2 3 of 8 www.diodes.com August 2016 © Diodes Incorporated DMP3026SFDF Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS -30 — — V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — -1 µA VDS = -24V, VGS = 0V Zero Gate Voltage Drain Current TJ = +150°C (Note 9) — — -100 Gate-Source Leakage IGSS — — ±10 µA VGS = ±25V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(TH) -1 — -3 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS(ON) — 15 19 m Ω VGS = -10V, ID = -4.5A 28 45 VGS = -4.5V, ID = -3.5A 34 54 VGS = -4.0V, ID = -3.0A Diode Forward Voltage VSD — -0.7 -1.2 V VGS = 0V, IS = -1.0A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance CISS — 1,204 — pF VDS = -15V, VGS = 0V, f = 1.0MHz Output Capacitance COSS — 154 — Reverse Transfer Capacitance CRSS — 112 — Gate Resistance RG — 16 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = -10V) QG — 19.6 — nC VDS = -15V, ID = -9.5A Total Gate Charge (VGS = -4.5V) QG — 9.2 — Gate-Source Charge QGS — 4.3 — Gate-Drain Charge QGD — 3.9 — Turn-On Delay Time tD(ON) — 5.3 — ns VDS = -15V, VGS = -10V, RG = 6Ω, ID = -9.5A Turn-On Rise Time tR — 23 — Turn-Off Delay Time tD(OFF) — 34 — Turn-Off Fall Time tF — 26 — Reverse Recovery Time tRR — 10 — ns IF = -9.5A, di/dt = 100A/μs Reverse Recovery Charge QRR — 3.3 — nC Notes: 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. |
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