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DMP3026SFDF Scheda tecnica(PDF) 3 Page - Diodes Incorporated

Il numero della parte DMP3026SFDF
Spiegazioni elettronici  P-CHANNEL ENHANCEMENT MODE MOSFET
PDF  8 Pages
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Produttore elettronici  DIODES [Diodes Incorporated]
Homepage  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMP3026SFDF Scheda tecnica(HTML) 3 Page - Diodes Incorporated

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DMP3026SFDF
Document number: DS38678 Rev. 1 - 2
3 of 8
www.diodes.com
August 2016
© Diodes Incorporated
DMP3026SFDF
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
-30
—
—
V
VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
—
—
-1
µA
VDS = -24V, VGS = 0V
Zero Gate Voltage Drain Current TJ = +150°C (Note 9)
—
—
-100
Gate-Source Leakage
IGSS
—
—
±10
µA
VGS = ±25V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(TH)
-1
—
-3
V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance
RDS(ON)
—
15
19
m
Ω
VGS = -10V, ID = -4.5A
28
45
VGS = -4.5V, ID = -3.5A
34
54
VGS = -4.0V, ID = -3.0A
Diode Forward Voltage
VSD
—
-0.7
-1.2
V
VGS = 0V, IS = -1.0A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
CISS
—
1,204
—
pF
VDS = -15V, VGS = 0V,
f = 1.0MHz
Output Capacitance
COSS
—
154
—
Reverse Transfer Capacitance
CRSS
—
112
—
Gate Resistance
RG
—
16
—
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = -10V)
QG
—
19.6
—
nC
VDS = -15V, ID = -9.5A
Total Gate Charge (VGS = -4.5V)
QG
—
9.2
—
Gate-Source Charge
QGS
—
4.3
—
Gate-Drain Charge
QGD
—
3.9
—
Turn-On Delay Time
tD(ON)
—
5.3
—
ns
VDS = -15V, VGS = -10V,
RG = 6Ω, ID = -9.5A
Turn-On Rise Time
tR
—
23
—
Turn-Off Delay Time
tD(OFF)
—
34
—
Turn-Off Fall Time
tF
—
26
—
Reverse Recovery Time
tRR
—
10
—
ns
IF = -9.5A, di/dt = 100A/μs
Reverse Recovery Charge
QRR
—
3.3
—
nC
Notes:
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.



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