DMP3026SFDF-7 datasheet(2/8 Pages) DIODES

2 / 8 page

DMP3026SFDF

Document number: DS38678 Rev. 1 - 2

2 of 8

www.diodes.com

August 2016

DMP3026SFDF

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

VDSS

-30

Gate-Source Voltage

VGSS

±25

Continuous Drain Current (Note 6) VGS = -10V

Steady

State

TA = +25°C

TA = +70°C

-8.6

-6.9

t<10s

TA = +25°C

TA = +70°C

-10.3

-8.3

Pulsed Drain Current (10

μs Pulse, Duty Cycle = 1%)

IDM

-50

Continuous Source-Drain Diode Current (Note 6)

TA = +25°C

-2.0

Avalanche Current (Note 7) L = 0.1mH

IAS

-23

Avalanche Energy (Note 7) L = 0.1mH

EAS

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 5)

TA = +25°C

0.71

TA = +70°C

0.47

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RθJA

178

°C/W

t<10s

125

Total Power Dissipation (Note 6)

TA = +25°C

2.0

TA = +70°C

1.3

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

°C/W

t<10s

Thermal Resistance, Junction to Case (Note 6)

Steady State

RθJC

7.4

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.

7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.

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