2014. 10. 02

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SEMICONDUCTOR

TECHNICAL DATA

KPS11N65D

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

Revision No : 0

General Description

This Super Junction MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for active power factor

correction and switching mode power supplies.

FEATURES

・V

・Drain-Source ON Resistance :

・Qg(typ.)= 28nC

MAXIMUM RATING (Tc=25

℃)

* : Drain current limited by maximum junction temperature.

CHARACTERISTIC

SYMBOL

RATING

UNIT

Drain-Source Voltage

650

V

Gate-Source Voltage

±30

V

Drain Current

11*

A

6.9*

Pulsed (Note1)

28*

Single Pulsed Avalanche Energy

(Note 2)

220

mJ

Repetitive Avalanche Energy

(Note 1)

4.9

mJ

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

4.5

V/ns

Drain Power

Dissipation

Tc=25

℃

83.3

W

Derate above 25

℃

0.67

W/

℃

Maximum Junction Temperature

150

℃

Storage Temperature Range

-55

～150

℃

Thermal Characteristics

Thermal Resistance, Junction-to-Case

1.5

℃/W

Thermal Resistance,

Junction-to-Ambient

62.5

℃/W

G

D

S

PIN CONNECTION

DPAK (1)

DIM MILLIMETERS

A

A

B

B

C

C

D

D

F

FF

H

G

K

G

J

L

K

L

M

0.96 MAX

0.90 MAX

E

E

M

N

H

0.70 MIN

O

0.1 MAX

N

12

3

6.60

0.20

+

_

6.10 0.20

+

_

5.34

0.30

+

_

0.70 0.20

+

_

2.70

0.15

+

_

2.30 0.10

+

_

1.80 0.20

+

_

0.50

0.10

+

_

2.30 0.10

+

_

0.50 0.10

+

_

J

O

1. GATE

2. DRAIN

3. SOURCE