2014. 11. 04

2/6

KPS15N65F

Revision No : 1

ELECTRICAL CHARACTERISTICS (Tc=25

℃)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

650

-

-

V

Breakdown Voltage Temperature Coefficient

ΔBV

-

0.6

-

V/

℃

Drain Cut-off Current

-

-

10

㎂

Gate Threshold Voltage

2.0

-

4.0

V

Gate Leakage Current

-

-

±100

nA

Drain-Source ON Resistance

-

0.24

0.28

Ω

Dynamic

Total Gate Charge

(Note 5)

-

38

-

nC

Gate-Source Charge

-

7

-

Gate-Drain Charge

-

20

-

Turn-on Delay time

(Note4,5)

-

29

-

ns

Turn-on Rise time

-

48

-

Turn-off Delay time

-

110

-

Turn-off Fall time

-

45

-

Input Capacitance

-

1005

-

pF

Output Capacitance

-

100

-

Reverse Transfer Capacitance

-

3

-

Source-Drain Diode Ratings

Continuous Source Current

-

-

15

A

Pulsed Source Current

-

-

45

Diode Forward Voltage

-

-

1.4

V

Reverse Recovery Time

dIs/dt=100A/

μs

-

335

-

ns

Reverse Recovery Charge

-

4.5

-

μC

Note 1) Repetivity rating : Pulse width limited by junction temperature.

Note 4) Pulse Test : Pulse width

≤ 10㎲, Duty Cycle ≤ 2%.

Note 5) Essentially independent of operating temperature.

2

PRODUCT NAME

LOT NO

1

001

2

KPS15N65

F

1

Marking