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BC856BW Scheda tecnica(PDF) 1 Page - Micro Commercial Components

Il numero della parte BC856BW
Spiegazioni elettronici  PNP General Purpose Transistors
PDF  3 Pages
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Produttore elettronici  MCC [Micro Commercial Components]
Homepage  http://www.mccsemi.com
Logo MCC - Micro Commercial Components

BC856BW Scheda tecnica(HTML) 1 Page - Micro Commercial Components

  BC856BW Datasheet HTML 1Page - Micro Commercial Components BC856BW Datasheet HTML 2Page - Micro Commercial Components BC856BW Datasheet HTML 3Page - Micro Commercial Components  
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Maximum Ratings
•
Operating temperature : -65
to +150
•
Storage temperature : -65
to +150
BC856AW/BW
BC857AW/BW/CW
BC858AW/BW/CW
PNP
General Purpose
Transistors
Features
•
Ideally Suited for Automatic Insertion
•
Complementary PNP Silicon Types Available
Parameter
Min
Max
Units
 omponents
20736 Marilla
Street Chatsworth

 !"#
$%    !"#
SOT-323
Suggested Solder
Pad Layout
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.071
.087
1.80
2.20
B
.045
.053
1.15
1.35
D
.026 Nominal
0.65Nominal
E
.047
.055
1.20
1.40
F
.012
.016
.30
.40
G
.000
.004
.000
.100
H
.035
.039
.90
1.00
J
.004
.010
.100
.250
A
C
B
D
E
F
G
H
J
1.90
0.70
0.90
0.65
0.65
DIMENSIONS
K
Symbol
Electrical Characteristics @ 25
Unless Otherwise Specified
•
For Switching and AF Amplifier Applications
•
Marking: BC856AW---3A ; BC856BW---3B
BC857AW---3E ; BC857BW---3F ; BC857CW---3G
BC858AW---3J ; BC858BW---3K ; BC858CW---3L
www.mccsemi.com
Revision: E
2015/12/04
1 of
3
OFF CHARACTERISTICS
V(BR)CBO
Collector-Base Breakdown Voltage
(IC=
-10µAdc, I
E=0)
BC856AW,BW
BC857AW,BW,CW
BC858AW,BW,CW
---
---
---
-80
-50
-30
Vdc
V(BR)CEO
Collector-Emitter Breakdown Voltage
(IC=
-10mAdc, I
B=0)
BC856AW,BW
BC857AW,BW,CW
BC858AW,BW,CW
---
---
---
-65
-45
-30
Vdc
V(BR)EBO
Collector-Emitter Breakdown Voltage
(IE=
-1µAdc, I
C=0)
---
-5
Vdc
ICBO
Collector Cut-off Current )
(VCB=
-30v,IE=0)
---
-15
nAdc
HFE(1)
DC Current Gain(VCE=
-5V, I
C=
-2mA)
BC856AW,BC857AW,BC858AW
BC856BW,BC857BW,BC858BW
BC857CW,BC858CW
125
220
420
250
475
800
---
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=
-100mA, I
B=
-5mA)
---
-0.65
Vdc
VBE(sat)
Base-Emitter Saturation Voltage
(IC=
-100mA, I
B=
-5mA)
---
-1.10
Vdc
fT
Transition Frequency
(VCE=
-5V, I
C=
-10mA, f=100MHz)
100
MHz
NF
Noise Figure
(VCE=
-5v,Ic=-200µA,Rs=2kohm,f=1kHz)
---
10
dB
CCBO
Collector-Base Capacitance
(VCB=
-10v,f=1.0kHz)
---
4.5
pF
Pd
Power Dissipation
---
150
mW
RJA
Thermal Resistance,Juncition to
Ambient
---
625
/W
Ic
Collector Current - Continuous
---
-100
mA
Note 1: Transistor mounted on an FR4 printed-circuit board
E
B
C
•
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
•
Epoxy meets UL 94 V-0 flammability rating
•
Moisure Sensitivity Level 1
inches
mm
Halogen free available upon request by adding suffix "-HF"
•
C
.083
.096
2.10
2.45
K
.006
.016
.15
.40
Micro Commercial Components
M C C
TM
---


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