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IIPP90R340C3 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IIPP90R340C3 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IPP90R340C3,IIPP90R340C3 · FEATURES · Static drain-source on-resistance: RDS(on) ≤0.34Ω · Enhancement mode · Fast Switching Speed · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · DESCRIPTION · High peak current capability · Ultra low gate charge · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 900 V VGS Gate-Source Voltage ± 20 V ID Drain Current-Continuous 15 A IDM Drain Current-Single Pulsed 34 A PD Total Dissipation @TC=25℃ 208 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 0.6 ℃ /W Rth(ch-a) Channel-to-ambient thermal resistance 62 ℃ /W |
Codice articolo simile - IIPP90R340C3 |
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Descrizione simile - IIPP90R340C3 |
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