BC856ASQ datasheet(2/6 Pages) DIODES

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BC856ASQ

Document number: DS38957 Rev. 1 - 2

2 of 6

www.diodes.com

June 2016

BC856ASQ

Absolute Maximum Ratings (@TA = 25°C unless otherwise specified)

Characteristic

Symbol

Value

Unit

Collector

– Base Voltage

VCBO

-80

Collector

– Emitter Voltage

VCEO

-65

Emitter

– Base Voltage

VEBO

-5.0

Collector Current

-100

Peak Collector Current

ICM

-200

Peak Emitter Current

IEM

-200

Thermal Characteristics (@TA = +25°C unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Power Dissipation (Note 6)

200

Thermal Resistance, Junction to Ambient Air (Note 6)

RθJA

625

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (Note 7) (@TA = +25°C unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector

– Base Breakdown Voltage

BVCBO

-80

—

IC = 10µA

Collector

– Emitter Breakdown Voltage

BVCEO

-65

—

IC = 10mA

Emitter

– Base Breakdown Voltage

BVEBO

-5

—

IE = 1µA

DC Current Gain

hFE

125

180

250

—

VCE = -5.0V, IC = -2.0mA

Collector

– Emitter Saturation Voltage

VCE(SAT)

—

-75

-250

-300

-650

IC = -10mA, IB = -0.5mA

IC = -100mA, IB = -5.0mA

Base

– Emitter Saturation Voltage

VBE(SAT)

—

-700

-850

—

IC = -10mA, IB = -0.5mA

IC = -100mA, IB = -5.0mA

Base

– Emitter Voltage

VBE(ON)

-600

—

-650

—

-750

-820

VCE = -5.0V, IC = -2.0mA

VCE = -5.0V, IC = -10mA

Collector

– Cutoff Current

ICES

ICBO

—

-15

-4.0

µA

VCE = -80V

VCB = -30V

VCB = -30V, TA = +150°C

Gain Bandwidth Product

100

—

MHz

VCE = -5.0V, IC = -10mA,

f = 100MHz

Collector

– Base Capacitance

CCB

—

VCB = -10V, f = 1.0MHz

Notes:

6. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device

is measured when operating in a steady-state condition.

7. Short duration pulse test used to minimize self-heating effect.

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