TC58FVB160AXB datasheet(18/41 Pages) TOSHIBA

18 / 41 page

TC58FVT160/B160AFT/AXB-70,-10

2002-08-06

18/41

DC CHARACTERISTICS

SYMBOL

PARAMETER

CONDITION

MIN

MAX

UNIT

ILI

Input Leakage Current

0 V

≤ VIN ≤ VDD



±1

ILO

Output Leakage Current

0 V

≤ VOUT ≤ VDD



±1

µA

IOH = −0.1 mA

VDD − 0.4



VOH

Output High Voltage

IOH = −2.5 mA

0.85

× VDD



VOL

Output Low Voltage

IOL = 4.0 mA



0.4

IDDO1

VDD Average Read Current

VIN = VIH/VIL, IOUT = 0 mA

tCYCLE = tRC = 100 ns



IDDO2

VDD Average Program Current

VIN = VIH/VIL, IOUT = 0 mA



IDDO3

VDD Average Erase Current

VIN = VIH/VIL, IOUT = 0 mA



IDDO4

VDD Average Program-while-

Erase-Suspend Current

VIN = VIH/VIL, IOUT = 0 mA



IDDS1

VDD Standby Current

= RESET = VDD

or RESET

= VSSV



IDDS2

VDD Standby Current

(Automatic Sleep Mode

(1)

)

VIH = VDD

VIL = VSS



IID

High-Voltage Input Current for

A9, OE and RESET

11.4 V

≤ VID ≤ 12.6 V



µA

VLKO

Low-VDD Lock-out Voltage



2.3

2.5

(1) The device enters Automatic Sleep Mode in which the address remains fixed for during 150 ns.

AC TEST CONDITIONS

PARAMETER

CONDITION

Input Pulse Level

VDD, 0.0 V

Input Pulse Rise and Fall Time (10%~90%)

5 ns

Timing Measurement Reference Level (input)

1.5 V, 1.5 V

Timing Measurement Reference Level (output)

1.5 V, 1.5 V

Output Load

CL (100 pF) + 1 TTL Gate

CL (30 pF) + 1 TTL Gate

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