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AM29DS163DB100WAF Scheda tecnica(PDF) 39 Page - Advanced Micro Devices

Il numero della parte AM29DS163DB100WAF
Spiegazioni elettronici  16 Megabit CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
PDF  50 Pages
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Produttore elettronici  AMD [Advanced Micro Devices]
Homepage  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29DS163DB100WAF Scheda tecnica(HTML) 39 Page - Advanced Micro Devices

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Am29DS163D
39
ADV ANCE
I N FO RMAT I O N
AC CHARACTERISTICS
Erase and Program Operations
Notes:
1. Not 100% tested.
2. See “Erase And Programming Performance” on page 48 for more information.
Parameter
100
120
JEDEC
Std
Description
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
100
120
ns
tAVWL
tAS
Address Setup Time
Min
0
0
ns
tASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
tWLAX
tAH
Address Hold Time
Min
50
ns
tAHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
0
ns
tDVWH
tDS
Data Setup Time
Min
50
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tOEPH
Output Enable High during toggle bit polling
Min
20
ns
tGHWL
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
50
ns
tWHDL
tWPH
Write Pulse Width High
Min
30
ns
tSR/W
Latency Between Read and Write Operations
Min
0
ns
tWHWH1
tWHWH1
Programming Operation (Note 2)
Byte
Typ
9
µs
Word
Typ
13
tWHWH1
tWHWH1
Accelerated Programming Operation,
Word or Byte (Note 2)
Typ
7
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
2
sec
tVCS
VCC Setup Time (Note 1)
Min
50
µs
tRB
Write Recovery Time from RY/BY#
Min
0
ns
tBUSY
Program/Erase Valid to RY/BY# Delay
Min
90
ns



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