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S29GL032A Scheda tecnica(PDF) 73 Page - SPANSION

Il numero della parte S29GL032A
Spiegazioni elettronici  64 MEGABIT 32MEGABIT 3.0 BOLT ONLY PAGE MODE FLASH MEMORY
PDF  88 Pages
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S29GL032A Scheda tecnica(HTML) 73 Page - SPANSION

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January 28, 2005 S29GLxxxA_00_A2
S29GLxxxA MirrorBit™ Flash Family
71
Advance
Information
Erase and Program Operations-S29GL032A Only
Notes:
1. Not 100% tested.
2. See “Erase And Programming Performance” for more information
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
5. If a program suspend command is issued within tPOLL, the device requires tPOLL before reading status data, once
programming resumes (that is, the program resume command has been written). If the suspend command was issued after
tPOLL, status data is available immediately after programming resumes. See Figure 16.
Parameter
Description
Speed Options
Unit
JEDEC
Std.
90
10
11
tAVAV
tWC
Write Cycle Time (Note 1)
Min
90
100
110
ns
tAVWL
tAS
Address Setup Time
Min
0
ns
tASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
tWLAX
tAH
Address Hold Time
Min
45
ns
tAHT
Address Hold Time From CE# or OE# high during toggle bit polling
Min
0
ns
tDVWH
tDS
Data Setup Time
Min
35
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tCEPH
CE# High during toggle bit polling
Min
20
ns
tOEPH
OE# High during toggle bit polling
Min
20
ns
tGHWL
tGHWL
Read Recovery Time Before Write (OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
35
ns
tWHDL
tWPH
Write Pulse Width High
Min
30
ns
tWHWH1
tWHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
240
µs
Single Word Program Operation (Note 2)
Typ
60
Accelerated Single Word Program Operation (Note 2)
Typ
54
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.5
sec
tVHH
VHH Rise and Fall Time (Note 1)
Min
250
ns
tVCS
VCC Setup Time (Note 1)
Min
50
µs
tBUSY
WE# High to RY/BY# Low
Min
90
100
110
ns
tPOLL
Program Valid before Status Polling
Max
4
µs



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