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SMP9410F Scheda tecnica(PDF) 4 Page - List of Unclassifed Manufacturers |
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SMP9410F Scheda tecnica(HTML) 4 Page - List of Unclassifed Manufacturers |
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4 / 13 page ![]() 4 SMP9410 SUMMIT MICROELECTRONICS, Inc. Preliminary Information 2056 2.0 10/04/02 Temperature Under Bias ......................... –55°C to 125°C Storage Temperature .............................. –65°C to 150°C Terminal Voltage with Respect to GND: VDD ................................ –0.3V to 6.0V All Others ....................... –0.3V to 6.0V Output Short Circuit Current……………….……….100mA Lead Solder Temperature (10 secs).....................300 °C Junction Temperature.........................................150°C ESD Rating per JEDEC……………………..………..2000V Latch-Up testing per JEDEC……………..…......+/- 100mA Note * - The device is not guaranteed to function outside its operating rating. Stresses listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions outside those listed in the operational sections of this specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability. DC OPERATING CHARACTERISTICS (Over Recommended Operating Conditions; Voltages are relative to GND) 2056 Elect TableA Temperature ........................................... –40°C to 85°C Voltage .................................................... 2.7V to 5.5V Package Thermal Resistance GJA 48 Pin TQFP = 80°C/W, 28 Pin QFN= 80°C/W GJC 48 Pin TQFP = 40°C/W, 28 Pin QFN= 32°C/W Moisture Classification Level 1 (MSL 1) per J-STD- 020 RELIABILITY CHARACTERISTICS Data Retention………………………..……..…..100 Years Endurance………………………...……….100,000 Cycles ABSOLUTE MAXIMUM RATINGS* RECOMMENDED OPERATING CONDITIONS l o b m y Sr e t e m a r a Pn o i t i d n o C. n i M. p y T. x a Ms t i n U r e w o P I D D t n e r r u c y l p p u s r e w o P V e t i r w V N D D V 5 . 5 =3 A m V e t i r w V N D D V 7 . 2 =3 A m t n e c s e i u q r o y b d n a t S V D D t n e r r u c g n i d u l c x E ; V 5 . 5 = s C A D h g u o r h t 1A m V D D t n e r r u c g n i d u l c x E ; V 7 . 2 = s C A D h g u o r h t 1A m n w o d r e w o P V D D t n e r r u c l a t o T ; V 5 . 5 = s C A D g n i d u l c n i 1A m V D D t n e r r u c l a t o T ; V 7 . 2 = s C A D g n i d u l c n i 1A m V D D e g a t l o v y l p p u S7 . 25 . 5V V H I , # E T U M , S C , L C S , A D S 2 A , 1 A , 0 A , H C _ # E T U M 7 . 0 × V D D V V L I 3 . 0 × V D D V V L O A D SI L O A m 3 =4 . 0V I I L e g a k a e l t u p n IV N I o t 0 =V D D 0 0 1A µ I O L e g a k a e l t u p t u O V T U O h g i h n i n w o d d e r e w o p e d o m e c n a d e p m i 0 1A µ W D N E e c n a r u d n e e t i r Ws n o i t a r e p o e r o t s V N f o r e b m u N1 × 0 1 6 s e r o t s V N t R D n o i t n e t e r a t a Dd V Nn o i t n e t e r a t a0 0 1s r a e Y |
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