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IXTP08N120P Scheda tecnica(PDF) 4 Page - IXYS Corporation |
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IXTP08N120P Scheda tecnica(HTML) 4 Page - IXYS Corporation |
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4 / 4 page ![]() IXYS reserves the right to change limits, test conditions, and dimensions. IXTA08N120P IXTP08N120P IXYS REF: T_08N120P(1C) 4-02-08-A Fig. 7. Transconductance 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 ID - Amperes TJ = - 40ºC 125ºC 25ºC Fig. 8. Forward Voltage Drop of Intrinsic Diode 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0.4 0.5 0.6 0.7 0.8 0.9 VSD - Volts TJ = 125ºC TJ = 25ºC Fig. 10. Gate Charge 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 14 QG - NanoCoulombs VDS = 600V I D = 0.4A I G = 1mA Fig. 9. Capacitance 1 10 100 1,000 0 5 10 15 20 25 30 35 40 VDS - Volts f = 1 MHz Ciss Crss Coss Fig. 11. Maximum Transient Thermal Impedance 0.1 1.0 10.0 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds |
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