IXTP05N100M datasheet(4/4 Pages) IXYS

Il numero della parte	IXTP05N100M

Spiegazioni elettronici	N-Channel Enhancement Mode Avalanche Rated

PDF	4 Pages

Scroll/Zoom	100%

Produttore elettronici	IXYS [IXYS Corporation]

Homepage	http://www.ixys.com

Logo

4 / 4 page

IXTP05N100M

IXYS reserves the right to change limits, test conditions, and dimensions.

Fig. 7. Transconductance

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

ID - Amperes

TJ = - 40ºC

125ºC

25ºC

Fig. 8. Forward Voltage Drop of

Intrinsic Diode

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

0.4

0.45

0.5

0.55

0.6

0.65

0.7

0.75

0.8

0.85

0.9

VSD - Volts

TJ = 125ºC

TJ = 25ºC

Fig. 9. Gate Charge

234

QG - NanoCoulombs

VDS = 500V

I D = 1A

I G = 1mA

Fig. 10. Capacitance

100

1,000

VDS - Volts

f = 1 MHz

Ciss

Crss

Coss

Fig. 11. Maximum Transient Thermal Impedance

0.1

1.0

10.0

0.0001

0.001

0.01

0.1

100

Pulse Width - Seconds

IXYS REF: T_05N100M(1T)7-29-08

IXTP05N100M Scheda tecnica(PDF) 4 Page - IXYS Corporation

IXTP05N100M Scheda tecnica(HTML) 4 Page - IXYS Corporation

Html Pages

1 2 3 4

Scheda tecnica Scarica

Link URL