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IRFB3004 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IRFB3004 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor IRFB3004,IIRFB3004 · FEATURES · Static drain-source on-resistance: RDS(on) ≤1.75mΩ · Enhancement mode · Fast Switching Speed · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATIONS · High Efficiency Synchronous Rectification in SMPS · Uninterruptible Power Supply · Hard Switched and High Frequency Circuits · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGS Gate-Source Voltage ± 20 V ID Drain Current-Continuous 340 A IDM Drain Current-Single Pulsed 1310 A PD Total Dissipation @TC=25℃ 380 W Tj Max. Operating Junction Temperature 175 ℃ Tstg Storage Temperature -55~175 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 0.4 ℃ /W Rth(ch-a) Channel-to-ambient thermal resistance 62 ℃ /W |
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