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SDM10U45LP Scheda tecnica(PDF) 2 Page - Diodes Incorporated

Il numero della parte SDM10U45LP
Spiegazioni elettronici  SURFACE MOUNT SCHOTTKY BARRIER DIODE
PDF  4 Pages
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Produttore elettronici  DIODES [Diodes Incorporated]
Homepage  http://www.diodes.com
Logo DIODES - Diodes Incorporated

SDM10U45LP Scheda tecnica(HTML) 2 Page - Diodes Incorporated

  SDM10U45LP Datasheet HTML 1Page - Diodes Incorporated SDM10U45LP Datasheet HTML 2Page - Diodes Incorporated SDM10U45LP Datasheet HTML 3Page - Diodes Incorporated SDM10U45LP Datasheet HTML 4Page - Diodes Incorporated  
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SDM10U45LP
Document number: DS30588 Rev. 10 - 2
2 of 4
www.diodes.com
January 2016
© Diodes Incorporated
SDM10U45LP
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Maximum Peak Reverse Voltage
VRM
45
V
Reverse Voltage
VR
40
V
RMS Reverse Voltage
VR(RMS)
28
V
Average Forward Current
IO
100
mA
Maximum (Peak) Forward Current
IFM
300
mA
Non-Repetitive Peak Forward Surge Current @ t
10ms
IFSM
1
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation
PD
250
mW
Thermal Resistance, Junction to Ambient Air
RJA
400
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-40 to +125
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
Reverse Breakdown Voltage (Note 5)
V(BR)R
30
V
IR = 100µA
Forward Voltage Drop
VF
280
360
470
580
550
800
mV
IF = 1.0mA
IF = 15mA
IF = 50mA
IF = 100mA
Reverse Current (Note 5)
IR
1.0
µA
VR = 25V
Total Capacitance
CT
7
15
pF
VR = 10V, f = 1.0 MHz
Notes:
5. Short duration pulse test used to minimize self-heating effect.
0.1
1.0
10
100
0
200
400
600
800
1,000
V , INSTANTANEOUS FORWARD VOLTAGE (mV)
Fig. 1 Typical Forward Characteristics
F
T = -25ºC
A
T = 25ºC
A
T = 125ºC
A
T = 75ºC
A
10
0
20
30
40
V , INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 2 Typical Reverse Characteristics
R
100
10
1.0
0.1
0.01
1,000



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