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TPS72012DRVT Scheda tecnica(PDF) 4 Page - Texas Instruments

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Il numero della parte TPS72012DRVT
Spiegazioni elettronici  350 mA, Ultra-Low VIN, RF Low-Dropout Linear Regulator With Bias Pin
PDF  28 Pages
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Produttore elettronici  TI1 [Texas Instruments]
Homepage  http://www.ti.com
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TPS72012DRVT Scheda tecnica(HTML) 4 Page - Texas Instruments

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TPS720
SBVS100E – JUNE 2008 – REVISED SEPTEMBER 2015
www.ti.com
6.2 ESD Ratings
VALUE
UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
±2000
Charged-device model (CDM), per JEDEC specification JESD22-
V(ESD)
Electrostatic discharge
±500
V
C101(2)
Machine model (MM)
±100
(1)
JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2)
JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating junction-air temperature range (unless otherwise noted)
MIN
NOM
MAX
UNIT
VIN
Input voltage (steady-state)
1.1
VBIAS or 4.5
(1)
V
VBIAS
Bias voltage
2.5 or or VOUT + 1.4(2)
5.5
V
VOUT
Output voltage
0.9
3.6
V
IOUT
Peak output current
0
350
mA
CIN
Input capacitance
1
µF
CBIAS
Bias capacitance
0.1
µF
COUT
(3)
Output capacitance
2.2
µF
(1)
Whichever is less
(2)
Whichever is greater
(3)
Maximum ESR should be less than 250 m
Ω.
6.4 Thermal Information
TPS720
THERMAL METRIC(1)
DRV (SON)
YZU (WSCP)
UNIT
6 PINS
5 PINS
RθJA
Junction-to-ambient thermal resistance
66.5
144.9
°C/W
RθJC(top)
Junction-to-case (top) thermal resistance
86.2
1.1
°C/W
RθJB
Junction-to-board thermal resistance
36.1
27.5
°C/W
ψJT
Junction-to-top characterization parameter
1.7
4.1
°C/W
ψJB
Junction-to-board characterization parameter
36.6
27.4
°C/W
RθJC(bot)
Junction-to-case (bottom) thermal resistance
7.4
N/A
°C/W
(1)
For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
4
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