CFH 400 Preliminary Datasheet

Maximum Ratings:

Parameter

Symbol

Unit

Drain-source voltage

VDS

5.5

V

Drain-gate voltage

VDG

6.5

V

Gate-source voltage

VGS

-2.0

V

Drain current

ID

80

mA

Channel temperature

TCh

150

°C

Storage temperature range

Tstg

-65...+150

°C

2

Ptot

150

mW

Thermal resistance

Channel-soldering point source

RthChS

166

K/W

1) Dimensions see page 4

Electrical characteristics:

at TA = 25°C unless otherwise specified

Characteristics

Symbol

min

typ

max

Unit

Drain-source saturation current

VDS = 3 V

VGS = 0 V

IDSS

0

40

70

mA

Pinch-off voltage

VDS = 3 V

ID = 1 mA

VGS(P)

-0.7

-0.25

0

V

Gate leakage current

VDS = 3 V

ID = 15 mA

IG

-

-

5

µA

Transconductance

VDS = 3 V

ID = 15 mA

gm

70

100

-

mS

Noise figure*

VDS = 3 V

ID = 10 mA

f = 1.8 GHz

VDS = 3 V

ID = 15 mA

f = 1.8 GHz

F

-

0.55

0.53

-

dB

Associated gain*

VDS = 3 V

ID = 10 mA

f = 1.8 GHz

VDS = 3 V

ID = 15 mA

f = 1.8 GHz

Ga

-

15.7

16.2

-

dB

IIP3*

VDS = 3 V

ID = 10 mA

f = 1.8 GHz

VDS = 3 V

ID = 15 mA

f = 1.8 GHz

IIP3

-

6

8.5

-

dBm

* Parameters are measured at input impedance for minimum noise figure and output

impedance for maximum gain.

Rev. 1.2; May 29th, 2003

pg. 2/6