AON6971 datasheet(6/10 Pages) AOSMD

6 / 10 page

AON6971

Symbol

Min

Typ

Max

Units

BVDSS

VDS=30V, VGS=0V

0.5

TJ=55°C

100

IGSS

±100

VGS(th)

Gate Threshold Voltage

1.2

1.6

1.4

1.7

TJ=125°C

2.4

1.7

2.2

Ω

gFS

180

VSD

0.44

0.6

Ciss

6221

Coss

1126

Crss

0.3

0.66

Ω

Qg(10V)

88.4

120

Qg(4.5V)

37.0

Qgs

15.6

Qgd

7.4

tD(on)

VDS=5V, ID=20A

SWITCHING PARAMETERS

Maximum Body-Diode Continuous Current

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

Turn-On Rise Time

Total Gate Charge

Turn-Off DelayTime

VGS=0V, VDS=0V, f=1MHz

Gate Source Charge

Total Gate Charge

Diode Forward Voltage

VGS=10V, VDS=15V, RL=0.75Ω,

Ω

Reverse Transfer Capacitance

VGS=0V, VDS=15V, f=1MHz

Gate Drain Charge

Gate resistance

IS=1A,VGS=0V

VGS=4.5V, ID=20A

Zero Gate Voltage Drain Current

Gate-Body leakage current

RDS(ON)

Static Drain-Source On-Resistance

Q2 Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

Drain-Source Breakdown Voltage

ID=10mA, VGS=0V

VGS=10V, VDS=15V, ID=20A

Ω

IDSS

Forward Transconductance

VDS=VGS ID=250µA

VDS=0V, VGS=±12V

VGS=10V, ID=20A

tD(off)

6.5

trr

Qrr

55.4

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

IF=20A, dI/dt=500A/µs

Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

RGEN=3Ω

A. The value of RθJA is measured with the device mounted on 1in

2 FR-4 board with 2oz. Copper, in a still air environment with T

A =25°C. The

Power dissipation P

DSM is based on R

θJA t ≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application

depends on the user's specific board design.

B. The power dissipation P

D is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep

initial T

J =25°C.

D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of T

J(MAX)=150°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is limited by package.

H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

Rev.1.0 : March 2013

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