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LM5105SD Scheda tecnica(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Il numero della parte LM5105SD
Spiegazioni elettronici  100V Half Bridge Gate Driver with Programmable Dead-time
PDF  12 Pages
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Produttore elettronici  NSC [National Semiconductor (TI)]
Homepage  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM5105SD Scheda tecnica(HTML) 2 Page - National Semiconductor (TI)

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Connection Diagram
20137501
10-Lead LLP
See NS Number SDC10A
Ordering Information
Ordering Number
Package Type
NSC Package Drawing
Supplied As
LM5105SD
LLP-10
SDC10A
1000 shipped as Tape & Reel
LM5105SDX
LLP-10
SDC10A
4500 shipped as Tape & Reel
Pin Descriptions
Pin
Name
Description
Application Information
1V
DD
Positive gate drive supply
Decouple VDD to VSS using a low ESR/ESL capacitor, placed as
close to the IC as possible.
2
HB
High side gate driver
bootstrap rail
Connect the positive terminal of bootstrap capacitor to the HB pin
and connect negative terminal to HS. The Bootstrap capacitor
should be placed as close to IC as possible.
3
HO
High side gate driver
output
Connect to the gate of high side N-MOS device through a short,
low inductance path.
4
HS
High side MOSFET source
connection
Connect to the negative terminal of the bootststrap capacitor and to
the source of the high side N-MOS device.
5
NC
Not Connected
6
RDT
Deadtime programming pin
A resistor from RDT to VSS programs the turn-on delay of both the
high and low side MOSFETs. The resistor should be placed close
to the IC to minimize noise coupling from adjacent PC board traces.
7
EN
Logic input for driver
Disable/Enable
TTL compatible threshold with hysteresis. LO and HO are held in
the low state when EN is low.
8
IN
Logic input for gate driver
TTL compatible threshold with hysteresis. The high side MOSFET
is turned on and the low side MOSFET turned off when IN is high.
9V
SS
Ground return
All signals are referenced to this ground.
10
LO
Low side gate driver output
Connect to the gate of the low side N-MOS device with a short, low
inductance path.
www.national.com
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