DBF210 datasheet(2/5 Pages) DIODES

2 / 5 page

DBF210

Document number: DS39301 Rev. 3 - 2

2 of 5

www.diodes.com

January 2018

DBF210

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

1000

RMS Reverse Voltage

VR(RMS)

700

Average Rectified Output Current (Note 5) @ TC = +110°C

2.0

Non-Repetitive Peak Forward Surge Current, 8.3ms

Single Half Sine-Wave Superimposed on Rated Load

IFSM

t Rating for Fusing (1ms < t < 8.3ms)

20.34

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Typical Thermal Resistance, Junction to Ambient (Note 6)

(Per Element)

RθJA

°C/W

Typical Thermal Resistance, Junction to Case (Per Element)

RθJC

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 7)

V(BR)R

1,000

—

IR = 5μA

Forward Voltage (Per Element)

—

0.85

0.93

0.95

1.0

IF = 1A, TA = +25°C

IF = 2A, TA = +25°C

Leakage Current (Note 7) (Per Element)

—

0.03

500

μA

VR = 1,000V, TA = +25°C

VR = 1,000V, TA = +125°C

Total Capacitance (Per Element)

—

VR = 4V, f = 1.0MHz

Notes:

5. Device mounted on glass epoxy PC board with 1.3mm

2 solder pad.

6. Device mounted on glass epoxy substrate with 1oz/ft

2, 15mmx15mm copper pad per pin.

7. Short duration pulse test used to minimize self-heating effect.

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