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RDBF151U Scheda tecnica(PDF) 2 Page - Diodes Incorporated

Il numero della parte RDBF151U
Spiegazioni elettronici  1.5A SURFACE MOUNT FAST GLASS PASSIVATED BRIDGE RECTIFIER
PDF  5 Pages
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Produttore elettronici  DIODES [Diodes Incorporated]
Homepage  http://www.diodes.com
Logo DIODES - Diodes Incorporated

RDBF151U Scheda tecnica(HTML) 2 Page - Diodes Incorporated

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RDBF151U-RDBF1510U
Document number: DS39410
Rev. 2 - 2
2 of 5
www.diodes.com
June 2018
© Diodes Incorporated
RDBF151U-RDBF1510U
Maximum Ratings and Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
RDBF151U
RDBF152U
RDBF154U
RDBF156U
RDBF158U
RDBF1510U
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
100
200
400
600
800
1000
V
RMS Reverse Voltage
VR(RMS)
70
140
280
420
560
700
V
Average Rectified Output Current (Note 5) @
TC = +110°C
IO
1.5
A
Non-Repetitive Peak Forward Surge Current,
8.3ms
Single Half Sine-Wave Superimposed on
Rated Load
IFSM
70
A
I
2
t Rating for Fusing (1ms < t < 8.3ms)
I
2
t
20.33
A
2
S
Maximum Forward Voltage (Per Element)
@IF=1.5A
VFM
1.3
V
Maximum Reverse Recovery Time (Note 7)
tRR
150
250
500
ns
Peak Reverse Current
@TA=+25℃
At Rated DC Blocking Voltage @TA=+125℃
IR
5.0
500
µA
Typical Total Capacitance (Per Element) (Note
8)
CT
25
pF
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Typical Thermal Resistance, Junction to Ambient (Note 6)
(Per Element)
RθJA
50
°C/W
Typical Thermal Resistance, Junction to Case (Per Element)
RθJC
10
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Notes:
5. Device mounted on glass epoxy PC board with 1.3mm
2 solder pad.
6. Device mounted on glass epoxy substrate with 1oz/ft
2, 15mmx15mm copper pad per pin.
7. Reverse recovery test conditions: IF=0.5A, IR=1.0A, IRR=0.25A
8. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC.



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