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MMRF2007N Scheda tecnica(PDF) 5 Page - NXP Semiconductors

Il numero della parte MMRF2007N
Spiegazioni elettronici  RF LDMOS Wideband Integrated Power Amplifiers
PDF  17 Pages
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Produttore elettronici  NXP [NXP Semiconductors]
Homepage  http://www.nxp.com
Logo NXP - NXP Semiconductors

MMRF2007N Scheda tecnica(HTML) 5 Page - NXP Semiconductors

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MMRF2007N MMRF2007GN
5
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
820
Gps
IMD
f, FREQUENCY (MHz)
Figure 4. Two--Tone Broadband Performance
@Pout = 35 Watts Avg.
26
36
35
34
--32
44
42
40
38
--27
--28
--29
--30
33
32
31
30
29
28
27
840
860
880
900
920
940
960
980
36
--31
VDD1 =28 Vdc,VDD2 =25 Vdc,IDQ1(A+B) =60 mA
IDQ2(A+B) = 550 mA, Pout =35 W (Avg.)
200 kHz Tone Spacing
Figure 5. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
--60
--10
--20
--30
--50
1
100
--40
IM3--U
IM3--L
IM5--U
IM5--L
IM7--L
IM7--U
PAE
Figure 6. Power Gain, Power Added Efficiency and
Intermodulation Distortion Products versus
Average Output Power
35
Pout, OUTPUT POWER (WATTS)
33
31
29
20
34
32
30
10
30
40
60
0
60
50
40
30
20
10
50
IMD
--60
0
--10
--20
--40
--30
--50
Gps
PAE
VDD1 =28 Vdc,VDD2 =25 Vdc,IDQ1(A+B) =60 mA
IDQ2(A+B) = 550 mA, f1 = 939.9 MHz, f2 = 940.1 MHz
VDD1 =28 Vdc,VDD2 =25 Vdc,Pout = 71 W (PEP)
IDQ1(A+B) =60 mA, IDQ2(A+B) = 550 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 900 MHz



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