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STF20NM60D Scheda tecnica(PDF) 4 Page - STMicroelectronics

Il numero della parte STF20NM60D
Spiegazioni elettronici  N-CHANNEL 600V - 0.26ohm - 20A TO-220-TO-220FP-TO-247 FDmesh POWER MOSFET (with FAST DIODE)
PDF  15 Pages
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Produttore elettronici  STMICROELECTRONICS [STMicroelectronics]
Homepage  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF20NM60D Scheda tecnica(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STF20NM60D - STP20NM60FD - STW20NM60FD
4/15
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min
Typ
Max Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250µA, VGS = 0
600
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = Max rating
VDS = Max rating, TC = 125 °C
1
10
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ±30V
±10
0
µA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250µA
3
4
5
V
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 10A
0.26 0.29
Ω
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min
Typ
Max Unit
gfs
(1)
1.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Forward transconductance
VDS > ID(on) x RDS(on)max,
ID = 10A
9S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer capacitance
VDS = 25V, f = 1 MHz, VGS = 0
1300
500
35
pF
pF
pF
Coss eq.
(2)
2.
Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80%
Equivalent output capacitance VGS = 0V, VDS = 0V to 480V
190
pF
RG
Gate input resistance
f=1 MHz Gate DC Bias = 0
Test signal level = 20mV
open drain
2.7
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480V, ID = 20A,
VGS = 10V
(see Figure 17)
37
10
17
52
nC
nC
nC



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