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Motore di ricerca datesheet componenti elettronici |
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Motore di ricerca datesheet componenti elettronici |
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RW1C026ZP Scheda tecnica(PDF) 1 Page - Rohm |
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RW1C026ZP Scheda tecnica(HTML) 1 Page - Rohm |
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1 / 12 page  RW1C026ZP Pch -20V -2.5A Middle Power MOSFET Datasheet l lOutline VDSS -20V WEMT6 RDS(on)(Max.) 70mΩ ID ±2.5A PD 0.7W l lInner circuit l lFeatures 1) Low on - resistance. 2) High Power small mold Package (WEMT6). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. l lPackaging specifications Type Packing Embossed Tape Reel size (mm) 180 l lApplication Tape width (mm) 8 Switching Basic ordering unit (pcs) 8000 Taping code T2CR Marking ZK l lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Value Unit Drain - Source voltage VDSS -20 V Continuous drain current ID ±2.5 A Pulsed drain current ID,pulse*1 ±10 A Gate - Source voltage VGSS ±10 V Power dissipation PD*2 0.7 W Junction temperature Tj 150 ℃ Range of storage temperature Tstg -55 to +150 ℃ www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 1/11 20140707 - Rev.001 |
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