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ISCD18106 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited

Il numero della parte ISCD18106
Spiegazioni elettronici  isc Silicon PNP Darlington Power Transistor
PDF  2 Pages
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Produttore elettronici  ISC [Inchange Semiconductor Company Limited]
Homepage  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

ISCD18106 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Darlington Power Transistor
ISCD18106
DESCRIPTION
·
High DC current gain
·
Built-in a damper diode at E-C
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for general purpose amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-2
A
ICP
Collector Current-Pulse
-4
A
PC
Collector Power Dissipation
Ta=25℃
1.75
W
PC
Collector Power Dissipation
TC=25℃
20
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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