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2SA1145 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SA1145 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() INCHANGE Semiconductor isc website: www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1145 DESCRIPTION · Low collector output capacitance · High frequency · Complement to 2SC2705 · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Audio frequency amplifier application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -50 mA PC Total Power Dissipation @ TC=25℃ 0.8 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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