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UGF8JD Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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UGF8JD Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 Isolated Ultra Fast Rectifier UGF8JD FEATURES · Low Forward Voltage · High Efficiency · Low leakage current · High frequency switching power supply · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Be suited as free wheeling or boost diode in continuous mode power factor correctors and other power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMB OL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current (Rated VR -20Khz square wave) -50% duty cycle 8 A IFSM Peak forward surge current ( 8.3 ms single half sine-wave superimposed on rated load) 100 A TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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