US1652L-S08-R datasheet(6/9 Pages) UTC

6 / 9 page

US1652

LINEAR INTEGRATED CIRCUIT

UNISONIC TECHNOLOGIES CO., LTD

6 of 9

www.unisonic.com.tw

QW-R119-027.A

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FU N CT I ON AL DESCRI PT I ON (Cont .)

Fig.6 OLP case

Fig.7 OVP case

OTP

OTP will shut down driver when junction temperature TJ>T(THR) for continual a blanking time.

(7) Driver Output Section

The driver-stage drives the gate of the MOSFET and is optimized to minimize EMI and to provide high circuit

efficiency. This is done by reducing the switch on slope when reaching the MOSFET threshold. This is achieved by a

slope control of the rising edge at the driver’s output. The output driver is clamped by an internal 16V Zener diode in

order to protect power MOSFET transistors against undesirable gate over voltage.

In addition to the gate drive control scheme mentioned, the gate drive strength can also be adjusted externally

by a resistor connected between VDD and VDD-G, the falling edge of the Drain output can be well controlled. It

provides great flexibility for system EMI design.

(8) Inside power switch MOS transistor

Specific power MOS transistor parameter is as “POWER MOS TRANSISTOR SECTION” in electrical

characteristics table.

US1652L-S08-R Scheda tecnica(PDF) 6 Page - Unisonic Technologies