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MMF80R650PTH Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MMF80R650PTH Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.cn isc & iscsemi is registered trademark 1 Isc N-Channel MOSFET Transistor MMF80R650PTH · FEATURES · Low power loss · High speed switching · Low on-resistance · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation · APPLICATIONS · Switching applications · Motor control · DC – DC converters · ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 800 V VGSS Gate-Source Voltage ± 30 V ID Drain Current-Continuous@TC=25℃ TC=100℃ 8 5.05 A IDM Drain Current-Single Pulsed 24 A PD Total Dissipation 32 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ · THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 3.9 ℃ /W Rth(ch-a) Channel-to-ambient thermal resistance 62.5 ℃ /W |
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